Correlation of compensation in Si-doped GaAs between electrical and optical methods

The compensation in Si-doped GaAs by metal organic vapor phase epitaxy was studied as a function of electron concentration and growth temperature by means of photoluminescence and Hall effect measurements. The PL spectra show peaks due to Si donor–Si acceptors $(Si_{Ga}–Si_{As})$ and Si-related complex-defects transitions, which may be attributed to Si donor coupled to a group III elemental vacancy $(Si_{Ga}–V_{Ga})$ complexes. We showed the importance of each of these defects pair to the optical properties, as it is strongly dependent on the growth parameters. The defects pair are responsible for autocompensation and confirmed by electrical measurements