A systematic study of the role of the melt–solid interface position in determining the crystal quality of Bridgman-grown indium antimonide ingots is made. The crystals are grown under various conditions of imposed gradients and velocities. The gradient-to-velocity ratio $\wedge$ in the crystal is seen to move the interface position above or below the melting-point isotherm and this in turn affects crystal quality and grain structure. Post-growth investigations reveal that the growth takes place under off-stoichiometric conditions, for large as well as for small values of $\wedge$, undesirable for growth of high-quality homogeneous ingots of InSb. However, crystals grown under ‘near-equilibrium’ conditions are stoichiometric, show low defect...
The internal friction in deformed InSb single crystals is investigated in the temperature range from...
Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochr...
The Rotatary Bridgman method was used to grow ternary InSb(1-x)SBix, crystals. In this method the am...
A systematic study of the role of the melt–solid interface position in determining the crystal quali...
The effect of growth parameters on the position of the interface in the melt growth of indium antimo...
Investigations related to the bulk and thin film growth of two of the antimony based semiconductors,...
Indium Antimonide (InSb) has possibility to be developed as the next generation radiation detector d...
This paper presents the results of our interface demarcation experiments during vertical Bridgman gr...
Bulk crystals of Ga0.9In0.1Sb have been grown using vertical directional solidification (VDS) techni...
Radially homogeneous bulk alloys of GaxIn1-xSb in the range 0.7 < x < 0.8, have been grown by vertic...
Technical Physics Division, Bhabha Atomic Research Centre Trombay, Bombay 400085 Manuscript receive...
Temperature-gradient zone melting has been utilized to grow a wide range of solid solution compositi...
The instability of a crystal–melt interface during the directional growth of pure antimony was studi...
We employ a computational model to revisit the classic crystal growth experiments conducted by Kim, ...
55-63Technologically important Indium Antimonide (InSb) thin films have been grown on different subs...
The internal friction in deformed InSb single crystals is investigated in the temperature range from...
Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochr...
The Rotatary Bridgman method was used to grow ternary InSb(1-x)SBix, crystals. In this method the am...
A systematic study of the role of the melt–solid interface position in determining the crystal quali...
The effect of growth parameters on the position of the interface in the melt growth of indium antimo...
Investigations related to the bulk and thin film growth of two of the antimony based semiconductors,...
Indium Antimonide (InSb) has possibility to be developed as the next generation radiation detector d...
This paper presents the results of our interface demarcation experiments during vertical Bridgman gr...
Bulk crystals of Ga0.9In0.1Sb have been grown using vertical directional solidification (VDS) techni...
Radially homogeneous bulk alloys of GaxIn1-xSb in the range 0.7 < x < 0.8, have been grown by vertic...
Technical Physics Division, Bhabha Atomic Research Centre Trombay, Bombay 400085 Manuscript receive...
Temperature-gradient zone melting has been utilized to grow a wide range of solid solution compositi...
The instability of a crystal–melt interface during the directional growth of pure antimony was studi...
We employ a computational model to revisit the classic crystal growth experiments conducted by Kim, ...
55-63Technologically important Indium Antimonide (InSb) thin films have been grown on different subs...
The internal friction in deformed InSb single crystals is investigated in the temperature range from...
Attempts were made to grow alloy crystals of Ga{sub 1{minus}x}In{sub x}Sb by the conventional Czochr...
The Rotatary Bridgman method was used to grow ternary InSb(1-x)SBix, crystals. In this method the am...