Topics
GaChemical substance
heterostructureSoftware
transmission electron microscopy (TEM)Topical concept
GaAsChemical substance
GaAs/Ge heterostructures were grown under different growth conditions by low-pressure metal organic vapor phase epitaxy (LP-MOVPE) and investigated by transmission electron microscopy (TEM). Abrupt heterointerface and antiphase domain (APD)-free single domain GaAs epilayers on Ge substrates were achieved under specific growth conditions. The lattice indexing of high-resolution transmission electron microscopy (HRTEM) exhibited excellent lattice line matching between the GaAs epilayer and the Ge substrate. These results led us to conclude that the optimal growth parameters for achieving high-quality GaAs/Ge heterostructure are As/Ga ratio of ~88:1, growth rate of ~3 $\mu m/h$, and growth temperature of 675°C
In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor...
In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor...
A diode structure consisting of a polar epilayer on a nonpolar substrate grown by metalorganic vapor...
GaAs/Ge heterostructures were grown under different growth conditions by low-pressure metal organic ...
GaAs/Ge heterostructures were grown under different growth conditions by low-pressure metal organic ...
GaAs/Ge heterostructures having abrupt interfaces were grown under different growth conditions and i...
GaAs/Ge heterostructures having abrupt interfaces were grown under different growth conditions and i...
We investigate influence of GaAs buffer layer (BL) growth parameters such as temperature and thickne...
Monolithic integration of III-V compounds into high density Si integrated circuits is a key technol...
Monolithic integration of III-V compounds into high density Si integrated circuits is a key technol...
Monolithic integration of III-V compounds into high density Si integrated circuits is a key technol...
The self-annihilation of antiphase boundaries (APBs)in GaAs epitaxial layers grown by low-pressure m...
The self-annihilation of antiphase boundaries (APBs) in GaAs epitaxial layers grown by low-pressure ...
Monolithic integration of III-V compounds into high density Si integrated circuits is a key technol...
The self-annihilation of antiphase boundaries (APBs)in GaAs epitaxial layers grown by low-pressure m...
In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor...
In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor...
A diode structure consisting of a polar epilayer on a nonpolar substrate grown by metalorganic vapor...
GaAs/Ge heterostructures were grown under different growth conditions by low-pressure metal organic ...
GaAs/Ge heterostructures were grown under different growth conditions by low-pressure metal organic ...
GaAs/Ge heterostructures having abrupt interfaces were grown under different growth conditions and i...
GaAs/Ge heterostructures having abrupt interfaces were grown under different growth conditions and i...
We investigate influence of GaAs buffer layer (BL) growth parameters such as temperature and thickne...
Monolithic integration of III-V compounds into high density Si integrated circuits is a key technol...
Monolithic integration of III-V compounds into high density Si integrated circuits is a key technol...
Monolithic integration of III-V compounds into high density Si integrated circuits is a key technol...
The self-annihilation of antiphase boundaries (APBs)in GaAs epitaxial layers grown by low-pressure m...
The self-annihilation of antiphase boundaries (APBs) in GaAs epitaxial layers grown by low-pressure ...
Monolithic integration of III-V compounds into high density Si integrated circuits is a key technol...
The self-annihilation of antiphase boundaries (APBs)in GaAs epitaxial layers grown by low-pressure m...
In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor...
In this work, low temperature growth of GaAs epitaxial layers on Ge substrates by metalorganic vapor...
A diode structure consisting of a polar epilayer on a nonpolar substrate grown by metalorganic vapor...
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