Observation of Non-Gaussian Conductance Fluctuations at Low Temperatures in Si:P(B) at the Metal-Insulator Transition

Kar, Swastik
Raychaudhuri, AK
Ghosh, Arindam
Löhneysen, HV
Weiss, G

Publication date

November 2003

Publisher

American Physical Society

Abstract

We report investigations of conductance fluctuations (with 1/f alpha power spectra) in doped silicon at low temperatures (T<20 K) as it is tuned through the metal-insulator transition (MIT) by changing the carrier concentration n. The scaled magnitude of noise, gamma H, increases with decreasing T following an approximate power law gamma H/~T- beta. At low T, gamma H diverges as n decreases through the critical concentration n/c, accompanied by a growth of low-frequency spectral weight. The second spectrum and probability density of the fluctuations show strong non-Gaussian behavior below 20 K as n/nc decreases through 1. This is interpreted as the onset of a glassy freezing of the electronic system across the MIT

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Observation of Non-Gaussian Conductance Fluctuations at Low Temperatures in Si:P(B) at the Metal-Insulator Transition

Abstract

Extracted data

Observation of Non-Gaussian Conductance Fluctuations at Low Temperatures in Si:P(B) at the Metal-Insulator Transition

Abstract

Extracted data

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