Probing the indium nitride lattice locally with the radioisotope probe 111In/Cd

Timmers, Heiko
Dogra, Rakesh
Shrestha, Santosh K.
Edge, A. Vernon J.
Byrne, Aidan P.

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Publication date

January 2005

DOI

10.1109/COMMAD.2004.1577481

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

The lattice structure of both InN grains with submicron dimensions and a MBE-grown InN film have been studied with the radioisotope probe in/Cd and Perturbed Angular Correlation spectroscopy. The quadrupole interaction frequency of the probe in this material has been measured to be of the order of 28 MHz, consistent with results for ALN and GaN. Strong damping of the signal indicates that InN has a highly defective lattice with diverse defect structures, which are not cured by annealing in the accessible temperature range

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Probing the indium nitride lattice locally with the radioisotope probe 111In/Cd

Abstract

Extracted data

Probing the indium nitride lattice locally with the radioisotope probe 111In/Cd

Abstract

Extracted data

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