We investigate theoretically how the spin-orbit Dresselhaus and Rashba effects influence the electronic structure of quasi-one-dimensional semiconductor quantum dots, similar to those that can be formed inside semiconductor nanorods. We calculate electronic energy levels, eigenfunctions, and effective g-factors for coupled, double dots made out of different materials, especially GaAs and InSb. We show that by choosing the form of the lateral confinement, the contributions of the Dresselhaus and Rashba terms can be tuned and suppressed, and we consider several possible cases of interest. We also study how, by varying the parameters of the double-well confinement in the longitudinal direction, the effective g-factor can be controlled to a lar...
In semiconductor quantum dots, the motion of the electrons is restricted to a finite region of a two...
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quant...
We report that the electron spin-relaxation time T1 in a GaAs quantum dot with a spin-1/2 ground sta...
We investigate band structures of (Formula presented.) three-dimensional conical quantum dots (QDs)....
Spin-orbit effects in single electron states in laterally coupled quantum dots in the presence of a...
12 pages, 5 figuresInternational audienceWe study the effect of the Dresselhaus spin-orbit interacti...
We show that the number of electrons confined in a semiconductor quantum dot has a strong influence ...
We study theoretically the electron-spin relaxation rate in quasi-one-dimensional coupled semiconduc...
The renormalization of the electron g factor by the confining potential in semiconductor nanostructu...
Motivated by recent experimental and theoretical developments, we investigate the influence of embed...
Recent progress in experimental studies of low-dimensional systems with strong spin-orbit coupling p...
We derive an effective Hamiltonian that describes the dynamics of electrons in the conduction band o...
We derive an effective Hamiltonian that describes the dynamics of electrons in the conduction band o...
A set of problems pertaining to quantum information processing in semiconductors is investigated. Tw...
The structural inversion asymmetry-induced spin-orbit interaction of conduction band electrons in zi...
In semiconductor quantum dots, the motion of the electrons is restricted to a finite region of a two...
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quant...
We report that the electron spin-relaxation time T1 in a GaAs quantum dot with a spin-1/2 ground sta...
We investigate band structures of (Formula presented.) three-dimensional conical quantum dots (QDs)....
Spin-orbit effects in single electron states in laterally coupled quantum dots in the presence of a...
12 pages, 5 figuresInternational audienceWe study the effect of the Dresselhaus spin-orbit interacti...
We show that the number of electrons confined in a semiconductor quantum dot has a strong influence ...
We study theoretically the electron-spin relaxation rate in quasi-one-dimensional coupled semiconduc...
The renormalization of the electron g factor by the confining potential in semiconductor nanostructu...
Motivated by recent experimental and theoretical developments, we investigate the influence of embed...
Recent progress in experimental studies of low-dimensional systems with strong spin-orbit coupling p...
We derive an effective Hamiltonian that describes the dynamics of electrons in the conduction band o...
We derive an effective Hamiltonian that describes the dynamics of electrons in the conduction band o...
A set of problems pertaining to quantum information processing in semiconductors is investigated. Tw...
The structural inversion asymmetry-induced spin-orbit interaction of conduction band electrons in zi...
In semiconductor quantum dots, the motion of the electrons is restricted to a finite region of a two...
We theoretically model the spin-orbit interaction in silicon quantum dot devices, relevant for quant...
We report that the electron spin-relaxation time T1 in a GaAs quantum dot with a spin-1/2 ground sta...