Hydrogen passivation of boron acceptors in as-grown boron-doped CVD diamond epilayers
- Fernández Lorenzo, Concepción
- Araújo Gay, Daniel
- Martín, J.
- Alcántara, J
- Navas, J.
- Villar, Maria del Pilar
- Alegre Salguero, María de la Paz
- Volpe, Pierre Nicola
- Omnés, Franck
- Bustarret, Etienne
Publication date
February 2010
DOI Publisher
Elsevier BV Journal
Diamond and Related Materials Language
EnglishAbstract
A homoepitaxial boron-doped diamond single layer is investigated by means of Fourier transformed infrared spectroscopy (FTIR) and cathodoluminescence (CL). Both techniques are shown to be complementary. μ-FTIR mapping allows to determine the location of active boron while CL allows discernability between passivation and compensation. Hydrogen incorporation during chemical vapour deposition (CVD) growth is revealed to passivate boron acceptors. The obtained results highlight that plasma etching can induce a dissociation of B–H centres.4 page
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