These last years, the triple-gate fin field-effect transistor (FinFET) has appeared as attractive candidate to pursue the complementary metal-oxide semiconductor technology roadmap for digital and analog applications. However, the development of analog applications requires models that properly describe the static and RF behaviors as well as the extrinsic parameters related to the three-dimensional FinFET architecture, in order to establish adequate design strategies. We demonstrate the feasibility of the compact model developed for symmetric doped double-gate metal-oxide-semiconductor field-effect transistor (symmetric doped double-gate MOSFET) to reproduce the experimental dc and RF behaviors for 40-nm technology node Silicon-on-Insulator...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
A model is proposed to account for the high-frequency characteristics of double-gate (DG) MOSFETs. P...
This last decade silicon MOSFETs have demonstrated their potentialities for very high frequency appl...
Summarization: Analog/RF performance of nanoscale triple gate FinFETs and planar single-gate (SG) an...
In performance driven layout design, parasitic components need to be evaluated with a reasonable deg...
Abstract—Recently, the first generation of mass production of FinFET-based microprocessors has begun...
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), ...
The ultra thin body (UTB) double gate (DG) MOSFET is believed to be the most promising device candid...
In this paper, based on a full intrinsic-extrinsic model for symmetric doped double-gate MOSFET, we ...
Recently, we developed a symmetric doped double gate model for MOSFETs, which includes a direct tunn...
During analysis of complexities of the Metal Oxide Semiconductor Field Effect Transistors (MOSFET) t...
Triple-Gate FinFETs have been demonstrated to be promising to push further the down scaling of CMOS ...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
In this work, we analyze the conduction mechanisms and the electrical performance of intrinsic and d...
A methodology to properly establish an accurate SOI FinFET compact model through SPICE simulator is ...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
A model is proposed to account for the high-frequency characteristics of double-gate (DG) MOSFETs. P...
This last decade silicon MOSFETs have demonstrated their potentialities for very high frequency appl...
Summarization: Analog/RF performance of nanoscale triple gate FinFETs and planar single-gate (SG) an...
In performance driven layout design, parasitic components need to be evaluated with a reasonable deg...
Abstract—Recently, the first generation of mass production of FinFET-based microprocessors has begun...
Multiple-gate devices, such as the planar double-gate (DG), triple-gate (TG), FinFET, Pi-Gate (PG), ...
The ultra thin body (UTB) double gate (DG) MOSFET is believed to be the most promising device candid...
In this paper, based on a full intrinsic-extrinsic model for symmetric doped double-gate MOSFET, we ...
Recently, we developed a symmetric doped double gate model for MOSFETs, which includes a direct tunn...
During analysis of complexities of the Metal Oxide Semiconductor Field Effect Transistors (MOSFET) t...
Triple-Gate FinFETs have been demonstrated to be promising to push further the down scaling of CMOS ...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
In this work, we analyze the conduction mechanisms and the electrical performance of intrinsic and d...
A methodology to properly establish an accurate SOI FinFET compact model through SPICE simulator is ...
In this work the analogue performance of 50 nm gate length FinFETs is investigated under static and ...
A model is proposed to account for the high-frequency characteristics of double-gate (DG) MOSFETs. P...
This last decade silicon MOSFETs have demonstrated their potentialities for very high frequency appl...