In recent years, Gallium Indium Nitride (InGaN) alloy has become a semiconductor of choice for the realization of optoelectronic devices, because of its wide spectral coverage, with a bandgap that can be modulated, by changing the indium composition, between 0.7 eV and 3.4 eV. This allows the absorption of a large part of the solar spectrumand makes the InGaN alloy an excellent candidate for the realization of high efficiency multi-junction solar cells. This thesis work led to a further investigation into the performance of different InGaN-based solar cell structures. It is part of a project aiming to associate mathematical optimization methods with a rigorous simulation process based as much as possible on models and experimental results. ...
Among III-V nitrides, the InGaN material has intensively been studied since the year 2000 for photov...
The electrical/structural characterization and simulation of III-N materials for detectors and solar...
International audienceOwing to its good tolerance to radiations, its high light absorption and its I...
In recent years, Gallium Indium Nitride (InGaN) alloy has become a semiconductor of choice for the r...
L’alliage de Nitrure de Gallium et d’Indium (InGaN) est devenu au cours des dernières années un semi...
International audienceNitride-based semiconductor materials are promising candidates for the manufac...
As our global energy expenditure increases exponentially, it is apparent that renewable energy solut...
Chapter one is an introductory chapter defining some basic physics that areimportant to solar cells a...
The InGaN ternary alloy has the potentiality to achieve high efficiency solar cells. Indeed the band...
The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunl...
Ce travail s’inscrit dans le cadre du développement de nouvelles applications des matériaux III-Nitr...
The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunl...
International audienceThe Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potential...
International audienceOn the road towards next generation high efficiency solar cells, the ternary I...
Among III-V nitrides, the InGaN material has intensively been studied since the year 2000 for photov...
The electrical/structural characterization and simulation of III-N materials for detectors and solar...
International audienceOwing to its good tolerance to radiations, its high light absorption and its I...
In recent years, Gallium Indium Nitride (InGaN) alloy has become a semiconductor of choice for the r...
L’alliage de Nitrure de Gallium et d’Indium (InGaN) est devenu au cours des dernières années un semi...
International audienceNitride-based semiconductor materials are promising candidates for the manufac...
As our global energy expenditure increases exponentially, it is apparent that renewable energy solut...
Chapter one is an introductory chapter defining some basic physics that areimportant to solar cells a...
The InGaN ternary alloy has the potentiality to achieve high efficiency solar cells. Indeed the band...
The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunl...
Ce travail s’inscrit dans le cadre du développement de nouvelles applications des matériaux III-Nitr...
The tunability of the InGaN band gap energy over a wide range provides a good spectral match to sunl...
International audienceThe Indium Gallium Nitride (InGaN) III-Nitride ternary alloy has the potential...
International audienceOn the road towards next generation high efficiency solar cells, the ternary I...
Among III-V nitrides, the InGaN material has intensively been studied since the year 2000 for photov...
The electrical/structural characterization and simulation of III-N materials for detectors and solar...
International audienceOwing to its good tolerance to radiations, its high light absorption and its I...