On-wafer Time-Domain and Low-Frequency Measurements of GaN HEMTs for Accurate Trap Modeling and its Impact on Pulse-to-Pulse Stability

International audienceThis paper reports on new techniques of on-wafer time-domain measurements applied to irregular bursts of RF pulses in order to enhance the nonlinear electro-thermal modeling of traps in GaN HEMTs. At first, advanced modeling techniques of traps are illustrated by specific pulsed I-V and low-frequency Y 22 measurements performed on a 10 W GaN HEMT at different temperatures. Finally, although we had initially developed the on-wafer time-domain measurement of low-frequency drain currents and pulse-to-pulse (P2P) stabilities for radar applications, such a measurement setup shows a great potential to improve the nonlinear electro-thermal modeling of traps