Contains fulltext : 36010.pdf (publisher's version ) (Closed access
Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technolog...
AlGaN/GaN HEMTs with different carrier supply layers are fabricated on Si substrate, using MOVPE gro...
AlGaN/GaN HEMTs grown οn Si substrates are very promising in commercial applications of RF power dev...
127 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.AlGaN/GaN high electron mobil...
We report AlGaN-GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE)...
GaN-based microwave power amplifiers have been identified as critical components in Sandia's next ge...
Contains fulltext : 147009.pdf (Publisher’s version ) (Open Access)XII, 147 p
RF performance and improved DC characteristics were observed for GaN-based HEMTs using epitaxial lay...
peer reviewedIn this comparative study we investigate AlGaN/GaN-based unpassivated and passivated HF...
High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorgani...
The performance of unpassivated AlGaN=GaN=SiC HEMTs prepared on different MOVPE grown layer structur...
The performance of unpassivated AlGaN/GaN/SiC HEMTs prepared on different MOVPE grown layer structur...
Today's world is digital world or we can say electronics world. So basically technology goes on incr...
AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-...
AlGaN/GaN HEMTs are perfect candidates for high-frequency, high-voltage and high-power applications ...
Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technolog...
AlGaN/GaN HEMTs with different carrier supply layers are fabricated on Si substrate, using MOVPE gro...
AlGaN/GaN HEMTs grown οn Si substrates are very promising in commercial applications of RF power dev...
127 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2004.AlGaN/GaN high electron mobil...
We report AlGaN-GaN high electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE)...
GaN-based microwave power amplifiers have been identified as critical components in Sandia's next ge...
Contains fulltext : 147009.pdf (Publisher’s version ) (Open Access)XII, 147 p
RF performance and improved DC characteristics were observed for GaN-based HEMTs using epitaxial lay...
peer reviewedIn this comparative study we investigate AlGaN/GaN-based unpassivated and passivated HF...
High-quality AlGaN/GaN high electron mobility transistor (HEMT) structures were grown by metalorgani...
The performance of unpassivated AlGaN=GaN=SiC HEMTs prepared on different MOVPE grown layer structur...
The performance of unpassivated AlGaN/GaN/SiC HEMTs prepared on different MOVPE grown layer structur...
Today's world is digital world or we can say electronics world. So basically technology goes on incr...
AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-...
AlGaN/GaN HEMTs are perfect candidates for high-frequency, high-voltage and high-power applications ...
Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technolog...
AlGaN/GaN HEMTs with different carrier supply layers are fabricated on Si substrate, using MOVPE gro...
AlGaN/GaN HEMTs grown οn Si substrates are very promising in commercial applications of RF power dev...
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