Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

Jiang, DS (Jiang, De-Sheng)
Zhao, DG (Zhao, De-Gang)
Yang, H (Yang, Hui)
Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn

January 2007

In this paper, recent progresses in optical analysis of dislocation-related physical properties in G...

Study of optical properties of bulk GaN crystals grown by HVPE

Gu, H(顾泓)
Ren, GQ(任国强)
Zhou, TF(周桃飞)
Tian, FF(田飞飞)
Xu, Y(徐俞)
Zhang, YM(张育民)
Wang, MY(王明月)
Zhang, ZQ(张志强)
Cai, DM
Wang, JF(王建峰)
Xu, K(徐科)

January 2016

We investigated the optical properties of a series of GaN samples sliced from the same bulk crystal ...

Structure, electronic properties, and interactions of defects in epitaxial GaN layers

Weidlich, Phillip

January 2014

Gallium nitride (GaN) is a III-V semiconductor which is widely used in optoelectronic devices, espec...

Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy

Jursenas, S.
Miasojedovas, S.
Kurilcik, G.
Zukauskas, A.
Hageman, P.R.

January 2004

Contains fulltext : 60520.pdf (publisher's version ) (Closed access

Defect influence on luminescence efficiency of GaN-based LEDs

Li, SP
Fang, ZL
Chen, HY
Li, JC
Chen, XH
Yuan, XL
Sekiguchi, T
Wang, QM
Kang, JY

Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposit...

Optical characterization of gallium nitride

Kirilyuk, Victoria

January 2002

Contains fulltext : 19110_optichofg.pdf (publisher's version ) (Open Access)Group ...

Luminescence Properties of Charged Dislocations in Semi-Insulating GaN:Zn

Srinivasan, S.
Cai, J.
Contreras, O.
Ponce, F. A.
Look, David C.
Molnar, Richard J.

March 2013

The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy h...

Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy

Jursenas, S.
Miasojedovas, S.
Kurilcik, G.
Zukauskas, A.
Hageman, P.R.

January 2003

Contains fulltext : 112521.pdf (publisher's version ) (Open Access

Photoluminescence of wurtzite GaN and its related alloys grown by MBE

Bell, A.

January 2000

The aim of this thesis was to investigate the properties of GaN and related compounds using photolum...

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

Xie, MH
Yang, H
Tong, Y
Zheng, LX
Li, Q
Or, CT
Xu, SJ

January 2001

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence tech...

Defects in GaN single crystals and homoepitaxial structures

Weyher, J.L.
Kamler, G.
Nowak, G.
Borysiuk, J.
Lucznik, B.
Krysko, M.
Grzegory, I.
Porowski, S.

January 2005

Contains fulltext : 32393.pdf (publisher's version ) (Closed access)In this commun...

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Church, SA
Hammersley, S
Mitchell, PW
Kappers, Menno
Lee, Lok Yi
Massabuau, Fabien
Sahonta, Lata
Frentrup, Martin
Shaw, LJ
Wallis, David
Humphreys, Colin
Oliver, Rachel
Binks, DJ
Dawson, P

May 2018

The photoluminescence spectra of a zincblende GaN epilayer grown via metal-organic chemical vapour d...

Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

Rudzinski, M.
Jezierska, E.
Weyher, J.L.
Macht, L.
Hageman, P.R.
Borysiuk, J.
Rodle, T.C.
Jos, H.F.F.
Larsen, P.K.

January 2007

Contains fulltext : 34898.pdf (publisher's version ) (Open Access

Photoluminescence study of homoepitaxial N-polar GaN grown on differently misoriented single crystal substrates

Kirilyuk, V.
Zauner, A.R.A.
Christianen, P.C.M.
Weyher, J.L.
Hageman, P.R.
Larsen, P.K.

January 2001

Contains fulltext : 112557.pdf (publisher's version ) (Closed access

Selective photoetching and transmission electron microscopy studies of defects in heteroepitaxial GaN

Weyher, J.L.
Tichelaar, F.D.
Zandbergen, H.W.
Macht, L.
Hageman, P.R.

January 2001

Contains fulltext : 112559.pdf (publisher's version ) (Open Access

Optical analysis of dislocation-related physical processes in GaN-based epilayers

Jiang, DS (Jiang, De-Sheng)
Zhao, DG (Zhao, De-Gang)
Yang, H (Yang, Hui)
Jiang, DS, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: dsjiang@red.semi.ac.cn

January 2007

In this paper, recent progresses in optical analysis of dislocation-related physical properties in G...

Study of optical properties of bulk GaN crystals grown by HVPE

Gu, H(顾泓)
Ren, GQ(任国强)
Zhou, TF(周桃飞)
Tian, FF(田飞飞)
Xu, Y(徐俞)
Zhang, YM(张育民)
Wang, MY(王明月)
Zhang, ZQ(张志强)
Cai, DM
Wang, JF(王建峰)
Xu, K(徐科)

January 2016

We investigated the optical properties of a series of GaN samples sliced from the same bulk crystal ...

Structure, electronic properties, and interactions of defects in epitaxial GaN layers

Weidlich, Phillip

January 2014

Gallium nitride (GaN) is a III-V semiconductor which is widely used in optoelectronic devices, espec...

Luminescence transients in highly excited GaN grown by hydride vapor-phase epitaxy

Jursenas, S.
Miasojedovas, S.
Kurilcik, G.
Zukauskas, A.
Hageman, P.R.

January 2004

Contains fulltext : 60520.pdf (publisher's version ) (Closed access

Defect influence on luminescence efficiency of GaN-based LEDs

Li, SP
Fang, ZL
Chen, HY
Li, JC
Chen, XH
Yuan, XL
Sekiguchi, T
Wang, QM
Kang, JY

Wafers with normal light-emitting diode structure were grown by metal organic chemical vapor deposit...

Optical characterization of gallium nitride

Kirilyuk, Victoria

January 2002

Contains fulltext : 19110_optichofg.pdf (publisher's version ) (Open Access)Group ...

Luminescence Properties of Charged Dislocations in Semi-Insulating GaN:Zn

Srinivasan, S.
Cai, J.
Contreras, O.
Ponce, F. A.
Look, David C.
Molnar, Richard J.

March 2013

The properties of semi-insulating thick films of Zn-doped GaN grown by hydride vapor phase epitaxy h...

Luminescence decay in highly excited GaN grown by hydride vapor-phase epitaxy

Jursenas, S.
Miasojedovas, S.
Kurilcik, G.
Zukauskas, A.
Hageman, P.R.

January 2003

Contains fulltext : 112521.pdf (publisher's version ) (Open Access

Photoluminescence of wurtzite GaN and its related alloys grown by MBE

Bell, A.

January 2000

The aim of this thesis was to investigate the properties of GaN and related compounds using photolum...

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

Xie, MH
Yang, H
Tong, Y
Zheng, LX
Li, Q
Or, CT
Xu, SJ

January 2001

Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence tech...

Defects in GaN single crystals and homoepitaxial structures

Weyher, J.L.
Kamler, G.
Nowak, G.
Borysiuk, J.
Lucznik, B.
Krysko, M.
Grzegory, I.
Porowski, S.

January 2005

Contains fulltext : 32393.pdf (publisher's version ) (Closed access)In this commun...

Effect of stacking faults on the photoluminescence spectrum of zincblende GaN

Church, SA
Hammersley, S
Mitchell, PW
Kappers, Menno
Lee, Lok Yi
Massabuau, Fabien
Sahonta, Lata
Frentrup, Martin
Shaw, LJ
Wallis, David
Humphreys, Colin
Oliver, Rachel
Binks, DJ
Dawson, P

May 2018

The photoluminescence spectra of a zincblende GaN epilayer grown via metal-organic chemical vapour d...

Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates

Rudzinski, M.
Jezierska, E.
Weyher, J.L.
Macht, L.
Hageman, P.R.
Borysiuk, J.
Rodle, T.C.
Jos, H.F.F.
Larsen, P.K.

January 2007

Contains fulltext : 34898.pdf (publisher's version ) (Open Access

Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

Abstract

Extracted data

Statistical photoluminescence of dislocations and associated defects in heteroepitaxial GaN grown by metal organic chemical vapor deposition

Abstract

Extracted data

Related items

Related items