A Commercial-Off-The-Shelf (COTS) 4H-SiC p-n photodiode (sold as a UV detector) was investigated as detector of electrons (β- particles) over the temperature range 100 °C to 20 °C. The photodiode had an active area of 0.06 mm2. The currents of the photodiode were measured in dark condition and under the illumination of a 63Ni radioisotope β- particle source (endpoint energy = 66 keV). The photodiode was then coupled to a custom-made low-noise charge-sensitive preamplifier to make a direct detection particle counting electron spectrometer. 63Ni β- particle spectra were accumulated with the spectrometer operating at temperatures up to 100 °C. The quantum efficiency of the photodiode as well as the spectrum expected to be detected were ca...
We used commercial off-the-shelf (COTS) silicon carbide (SiC) ultraviolet photodiodes for measuring ...
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environm...
We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H...
4H-SiC Schottky photodiodes, with epitaxial layers, employing thin (20 nm) Ni2Si Schottky contacts,...
An electronic grade single crystal chemical vapour deposition diamond was investigated as a prototyp...
Two commercial-off-the-shelf (COTS) 4H-SiC UV photodiodes have been investigated for their suitabili...
Work towards producing a radiation-hard and high temperature tolerant direct detection ele...
The results of electrical characterisation and X-ray detection measurements of two different active ...
SiC and Al0.52In0.48P photodiodes were experimentally investigated for their suitability as radiatio...
AbstractThe results of electrical characterisation and X-ray detection measurements of two different...
Wide bandgap semiconductor photodiodes were investigated for their suitability as radiation detector...
The development and characterization of a prototype temperature tolerant (capable of operation up to...
A prototype monolithic 2 × 2 square pixel Al0.2Ga0.8As p+ -i-n+mesa photodiode array (each photodio...
In this work, a 200 μm diameter InGaP (GaInP) p+-i-n+ mesa photodiode was studied across the tempera...
A commercial-off-the-shelf (COTS) Si p+-i-n+ photodiode (Hamamatsu S5973), designed for visible and ...
We used commercial off-the-shelf (COTS) silicon carbide (SiC) ultraviolet photodiodes for measuring ...
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environm...
We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H...
4H-SiC Schottky photodiodes, with epitaxial layers, employing thin (20 nm) Ni2Si Schottky contacts,...
An electronic grade single crystal chemical vapour deposition diamond was investigated as a prototyp...
Two commercial-off-the-shelf (COTS) 4H-SiC UV photodiodes have been investigated for their suitabili...
Work towards producing a radiation-hard and high temperature tolerant direct detection ele...
The results of electrical characterisation and X-ray detection measurements of two different active ...
SiC and Al0.52In0.48P photodiodes were experimentally investigated for their suitability as radiatio...
AbstractThe results of electrical characterisation and X-ray detection measurements of two different...
Wide bandgap semiconductor photodiodes were investigated for their suitability as radiation detector...
The development and characterization of a prototype temperature tolerant (capable of operation up to...
A prototype monolithic 2 × 2 square pixel Al0.2Ga0.8As p+ -i-n+mesa photodiode array (each photodio...
In this work, a 200 μm diameter InGaP (GaInP) p+-i-n+ mesa photodiode was studied across the tempera...
A commercial-off-the-shelf (COTS) Si p+-i-n+ photodiode (Hamamatsu S5973), designed for visible and ...
We used commercial off-the-shelf (COTS) silicon carbide (SiC) ultraviolet photodiodes for measuring ...
Advances towards achieving the goal of miniature 4H-SiC based radiation detectors for harsh environm...
We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H...