Add to ORKGScaling has been pivotal in the success of the Moore's law. Using scaling techniques to improve the MOSFET comes at a risk of growing short channel effects. This publication deals with the theoretical study of impact of gate length scaling on planar bulk MOSFET. A systematical study shows that the impact of short channel effects like drain induced barrier lowering, subthreshold leakage, hot carrier generation and channel length modulation grows with gate length scaling. Thereby degrading the MOSFET performance. In addition to the numerical device simulation an analytical modelling of the device is also performed. Though the analytical model explains the device characteristic trends, it is found to be quantitative inaccurate in comparison to...
This is the Final Year Project Final Report of Universiti Teknologi PETRONAS Final Year Student, As...
This paper presents a MOSFET scaling study based on the current 45 nm technology generation. The stu...
The scaling of CMOS technology has progressed rapidly for three decades, contributing to the superio...
Scaling has been pivotal in the success of the Moore's law. Using scaling techniques to improve the ...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
Abstract - Device scaling is directly responsible for Moore’s law and has enabled remarkable improve...
[[abstract]]The analytical dependences of the short-channel effect on the channel and source/drain d...
Semiconductor technology has reached an end in the manufacture of conventional Metal Oxide semicondu...
There have been proposed several sets of “rules ” for scaling, for the purpose of discovering as muc...
The exponential increase of leakage currents in a scaled device is an inevitable consequence of MOSF...
This paper investigates effects from gate scaling in Tri-gate FinFET structure by simulation method,...
As the conventional bulk CMOS shrinks towards the deep sub -100 nm regime, the advantages of scaling...
Abstract—We derive a new scale length for two-dimensional (2-D) effects in MOSFET’s and discuss its ...
Channel length of metal oxide semiconductor field effect transistors (MOSFETs) are scaling below 20 ...
[[abstract]]In this paper the analytical channel potential solution and short-channel effect model a...
This is the Final Year Project Final Report of Universiti Teknologi PETRONAS Final Year Student, As...
This paper presents a MOSFET scaling study based on the current 45 nm technology generation. The stu...
The scaling of CMOS technology has progressed rapidly for three decades, contributing to the superio...
Scaling has been pivotal in the success of the Moore's law. Using scaling techniques to improve the ...
[[abstract]]This article presents an analytical short-channel effect model for nanoscale MOSFETs. Wi...
Abstract - Device scaling is directly responsible for Moore’s law and has enabled remarkable improve...
[[abstract]]The analytical dependences of the short-channel effect on the channel and source/drain d...
Semiconductor technology has reached an end in the manufacture of conventional Metal Oxide semicondu...
There have been proposed several sets of “rules ” for scaling, for the purpose of discovering as muc...
The exponential increase of leakage currents in a scaled device is an inevitable consequence of MOSF...
This paper investigates effects from gate scaling in Tri-gate FinFET structure by simulation method,...
As the conventional bulk CMOS shrinks towards the deep sub -100 nm regime, the advantages of scaling...
Abstract—We derive a new scale length for two-dimensional (2-D) effects in MOSFET’s and discuss its ...
Channel length of metal oxide semiconductor field effect transistors (MOSFETs) are scaling below 20 ...
[[abstract]]In this paper the analytical channel potential solution and short-channel effect model a...
This is the Final Year Project Final Report of Universiti Teknologi PETRONAS Final Year Student, As...
This paper presents a MOSFET scaling study based on the current 45 nm technology generation. The stu...
The scaling of CMOS technology has progressed rapidly for three decades, contributing to the superio...