Electronic structure of doped 2D materials

Electronic systems are an indivisible part of modern life. Every day, new materials, devices, passive components, antennas for wireless communication are needed to be designed and developed. In particular, flexible and biocompatible wearable devices are urgent required for medical and industrial applications. The great hope lies in the materials with high crystalline quality and flexibility such as graphene and other 2D semiconductors and insulators. Doping is a conventional tool for tailoring of the electronic properties of the functional materials. Here we examine application of the widely used the electron donor species to the graphene and hexagonal boron nitride monolayer (h-BN). For each we determine surface-interface properties and the full electronic band structure using the combination of the surface science methods such as angle-integrated and angle resolved photoemission (XPS, ARPES), electron diffraction (LEED) and photo absorption (XAS). As the result we provided insight into mechanisms underlying the doping gating of the graphene h-BN monolayer by the alkali metals. We fully characterized their surface and interface structure. Finally we studied the interplay between electrons and phonons in the doped graphene and we demonstrated that Ca-doped graphene is the promising candidate for realizing superconductivity in graphene