Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors

We report the development of low operating voltages in inorganic–organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO_<i>x</i> gate dielectric and a hybrid multilayer channel consisting of the heterojunction In₂O₃/ZnO and the organic polymer “Super Yellow” acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm²/(V s)) with appreciable current on/off ratios (≈10³) and an external quantum efficiency of 2 × 10^–2% at 700 cd/m². The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered