The interaction between a graphene layer and pentacene (PEN) molecules leads to the formation of a <i>lying-down</i> phase, which can improve charge transport for organic vertical field effect transistors and enhance the optical absorption for increased light harvesting in organic solar cells. Here, we present a comprehensive study of PEN growth on epitaxial graphene on silicon carbide (SiC). Simultaneous grazing-incidence small- and wide-angle X-ray scattering (GISAXS/GIWAXS) were used in situ for real-time monitoring of the PEN crystal growth with millisecond time resolution to identify <i>two</i> distinct anisotropic growth stages after the nucleation of the first monolayer (ML). In the first stage up to 1.5 nm, we observe rapid growth o...
International audienceWe present energy filtered electron emission spectromicroscopy with spatial an...
For graphene to be a viable platform for nanoscale devices, high quality growth and structures are n...
International audienceThe current process of growing graphene by thermal decomposition of 3C-SiC(100...
The interaction between a graphene layer and pentacene (PEN) molecules leads to the formation of a l...
The properties of epitaxial graphene on the C-face of SiC are investigated using comprehensive struc...
Because of its high compatibility with conventional microfabrication processing technology, epitaxia...
© 2020 by the authors. Licensee MDPI, Basel, Switzerland. Graphene distinctive electronic and optica...
Growth of nanocrystalline graphene films on (6√3×6√3) R30°- reconstructed SiC surfaces was achieved ...
Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties...
Highly transparent and conductive monolayer graphene was used as a template to tune the crystal orie...
The mechanism of few-layer graphene growth on the technologically relevant cubic-SiC/Si(001) substra...
Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge...
We grow epitaxial graphene on 6H-SiC (0001) substrates in Ar background and intercalatehydrogen to r...
Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimat...
DoctorIncorporation of graphene and organic semiconductors (OSCs) promises a new generation of opto-...
International audienceWe present energy filtered electron emission spectromicroscopy with spatial an...
For graphene to be a viable platform for nanoscale devices, high quality growth and structures are n...
International audienceThe current process of growing graphene by thermal decomposition of 3C-SiC(100...
The interaction between a graphene layer and pentacene (PEN) molecules leads to the formation of a l...
The properties of epitaxial graphene on the C-face of SiC are investigated using comprehensive struc...
Because of its high compatibility with conventional microfabrication processing technology, epitaxia...
© 2020 by the authors. Licensee MDPI, Basel, Switzerland. Graphene distinctive electronic and optica...
Growth of nanocrystalline graphene films on (6√3×6√3) R30°- reconstructed SiC surfaces was achieved ...
Graphene layers grown on the C-face SiC exhibit quite different structural and electronic properties...
Highly transparent and conductive monolayer graphene was used as a template to tune the crystal orie...
The mechanism of few-layer graphene growth on the technologically relevant cubic-SiC/Si(001) substra...
Structured Silicon Carbide was proposed to be an ideal template for the production of arrays of edge...
We grow epitaxial graphene on 6H-SiC (0001) substrates in Ar background and intercalatehydrogen to r...
Graphene was grown on the C-face of nominally on-axis SiC substrates using high-temperature sublimat...
DoctorIncorporation of graphene and organic semiconductors (OSCs) promises a new generation of opto-...
International audienceWe present energy filtered electron emission spectromicroscopy with spatial an...
For graphene to be a viable platform for nanoscale devices, high quality growth and structures are n...
International audienceThe current process of growing graphene by thermal decomposition of 3C-SiC(100...