The secondary electron emission (SEE) yield of heterostructures of zinc oxide (ZnO) nanoneedles coaxially coated with aluminum nitride (AIN) or gallium nitride (GaN) has been studied using ion and X-ray beams. This paper describes experiments performed with ions (2 MeV protons and 3.6 MeV/nucleon carbon beams) and photons (synchrotron radiation at approximate to 1 keV). The SEE yield of the heterostructures is enhanced significantly by the intrinsic nanostructure of the ZnO nanoneedle templates as compared to the AIN and GaN thin films on silicon (Si) substrates [T.J. Vink, R.G.F.A. Verbeek, V. Elsbergen, P.K. Bachmann, Appl. Phys. Lett. 83 (2003) 2285]. One of the mechanisms responsible for SEE yield enhancement can be attributed to the la...
We report on heteroepitaxial fabrication and structural characterizations of ultrafine GaN/ZnO coaxi...
Transmission electron microscopy images of annealed ZnO/silicon nitride (SiN(x)) multilayer grown on...
This work presents the selective growth of three-dimensional metallic gallium nitride structures on ...
The secondary electron emission (SEE) yield of heterostructures of zinc oxide (ZnO) nanoneedles coax...
Needle work: AlN/ZnO and GaN/ZnO coaxial nanoneedle heterostructures (see TEM image) have a higher s...
The secondary electron emission (SEE) yield of coaxially AlN or GaN coated ZnO nanoneedle heterostru...
Herein, the secondary electron emission (SEE) from 1D nanomaterials in the form of nanorods is inves...
This paper discusses the use of nanomaterials for the improved performance of time-of-flight particl...
We have synthesized GaN-core/ZnO-shell nanowires and investigated effects of the ZnO coating. The Xr...
New device concepts and materials for the fabrication of compact high-frequency vacuum sources and m...
report on the growth of ZnO single crystal thin films on GaN templates by vapor phase de-position us...
We studied the fabrication and field-emission characteristics of position-controlled AlN/ZnO nanotub...
In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage p...
For the advance of GaN based optoelectronic devices, one of the major barriers has been the high def...
We demonstrate that the morphology effect on the ZnO surface using organic acids significantly impro...
We report on heteroepitaxial fabrication and structural characterizations of ultrafine GaN/ZnO coaxi...
Transmission electron microscopy images of annealed ZnO/silicon nitride (SiN(x)) multilayer grown on...
This work presents the selective growth of three-dimensional metallic gallium nitride structures on ...
The secondary electron emission (SEE) yield of heterostructures of zinc oxide (ZnO) nanoneedles coax...
Needle work: AlN/ZnO and GaN/ZnO coaxial nanoneedle heterostructures (see TEM image) have a higher s...
The secondary electron emission (SEE) yield of coaxially AlN or GaN coated ZnO nanoneedle heterostru...
Herein, the secondary electron emission (SEE) from 1D nanomaterials in the form of nanorods is inves...
This paper discusses the use of nanomaterials for the improved performance of time-of-flight particl...
We have synthesized GaN-core/ZnO-shell nanowires and investigated effects of the ZnO coating. The Xr...
New device concepts and materials for the fabrication of compact high-frequency vacuum sources and m...
report on the growth of ZnO single crystal thin films on GaN templates by vapor phase de-position us...
We studied the fabrication and field-emission characteristics of position-controlled AlN/ZnO nanotub...
In this paper we report on the analysis of Al⁺-implanted ZnO/GaN bilayers in search for the damage p...
For the advance of GaN based optoelectronic devices, one of the major barriers has been the high def...
We demonstrate that the morphology effect on the ZnO surface using organic acids significantly impro...
We report on heteroepitaxial fabrication and structural characterizations of ultrafine GaN/ZnO coaxi...
Transmission electron microscopy images of annealed ZnO/silicon nitride (SiN(x)) multilayer grown on...
This work presents the selective growth of three-dimensional metallic gallium nitride structures on ...