Ni silicides formation: use of Ge and Pt to study the diffusing species, lateral growth and relaxation mechanisms.

24th Workshop on Materials for Advanced Metallization held Jointly with the International Interconnect Technology (IITC) Conference, Grenoble, FRANCE, MAY 18-21, 2015International audienceThe Ni silicide formation was studied by in situ X-ray diffraction, APT and TEM through the use of either a thin layer of Ge (1 nm) deposited between the Ni film and a Si substrate or a Ni(10% Pt) film. The Ge was used as a marker for the diffusing species during Ni silicide formation and the Ni(10% Pt) allows revealing the lateral growth of NiSi