Spin-transfer torque magnetic memory as a stochastic memristive synapse

Conference of 2014 IEEE International Symposium on Circuits and Systems, ISCAS 2014 ; Conference Date: 1 June 2014 Through 5 June 2014; Conference Code:107394International audienceSpin-transfer torque magnetic memory (STT-MRAM) is currently under intense academic and industrial development, since it features nonvolatility, high write and read speed and high endurance. In this work, we show that when used in an original regime, it can additionally act as a stochastic memristive device, appropriate to implement a 'synaptic' function. We introduce basic concepts relating to STT-MRAM cell behavior and its possible use to implement learning-capable synapses. System-level simulations on a problem of car counting highlight the potential of the technology for learning systems. Monte Carlo simulations show its robustness to device variations. These results open the way for unexplored applications of STT-MRAM in robust, low power, cognitive-type systems