This paper presents ultra-Low power (ultra-LP) Low voltage (LV) tunable transconductor (Gm) and its application to implement Gm-C filter. The CMOS structure of the Gm is performed using bulk-driven (BD) MOST technique, thus it can operate with extremely low voltage supply of ±0.3 V using 0.18 μm CMOS process. Moreover, it consumes ultra-LP about 4.9 μW. The simple topology, proper operating range, and tunability make this transconductor attractive. The transconductor and the Gm-C filter have been examined using simulation program Pspice
A linear, tunable CMOS transconductance stage is introduced. Drain voltage of the input transistor o...
This paper describes a CMOS transconductance cell for the implementation of very high frequency curr...
This paper presents two design strategies for realising very low transconductance transconductors em...
This paper presents ultra-Low power (ultra-LP) Low voltage (LV) tunable transconductor (Gm) and its ...
A linearly-tunable ULV transconductor featuring excellent stability of the processed signal common-m...
A differential input, single ended output transconductor with gm in the range 0.5-5 nS is presented....
Abstract Two compact ultra low-power CMOS triode transconductor topologies denoted VLPT-gm and Delta...
750-755This study presents a high performance complementary metal oxide semiconductor (CMOS) transc...
This paper proposes a 3rd-order gm-C filter that operates with the extremely low voltage supply of 0...
A linearly tunable low-voltage CMOS transconductor featuring a new adaptative-bias mechanism that co...
This paper presents a third-order Butterworth low-pass filter (LPF) with continuously tuning capabil...
A low voltage low power operational transconductance amplifier (OTA) based on a bulk driven cell and...
This paper presents a third-order Butterworth low-pass filter (LPF) with continuously tuning capabil...
This paper presents a transconductor suitable for implementation in submicron CMOS technology. The t...
A second order fully integrated low pass filter with cut-off frequency variable in the range 1.5-15 ...
A linear, tunable CMOS transconductance stage is introduced. Drain voltage of the input transistor o...
This paper describes a CMOS transconductance cell for the implementation of very high frequency curr...
This paper presents two design strategies for realising very low transconductance transconductors em...
This paper presents ultra-Low power (ultra-LP) Low voltage (LV) tunable transconductor (Gm) and its ...
A linearly-tunable ULV transconductor featuring excellent stability of the processed signal common-m...
A differential input, single ended output transconductor with gm in the range 0.5-5 nS is presented....
Abstract Two compact ultra low-power CMOS triode transconductor topologies denoted VLPT-gm and Delta...
750-755This study presents a high performance complementary metal oxide semiconductor (CMOS) transc...
This paper proposes a 3rd-order gm-C filter that operates with the extremely low voltage supply of 0...
A linearly tunable low-voltage CMOS transconductor featuring a new adaptative-bias mechanism that co...
This paper presents a third-order Butterworth low-pass filter (LPF) with continuously tuning capabil...
A low voltage low power operational transconductance amplifier (OTA) based on a bulk driven cell and...
This paper presents a third-order Butterworth low-pass filter (LPF) with continuously tuning capabil...
This paper presents a transconductor suitable for implementation in submicron CMOS technology. The t...
A second order fully integrated low pass filter with cut-off frequency variable in the range 1.5-15 ...
A linear, tunable CMOS transconductance stage is introduced. Drain voltage of the input transistor o...
This paper describes a CMOS transconductance cell for the implementation of very high frequency curr...
This paper presents two design strategies for realising very low transconductance transconductors em...