Conference of 22nd IEEE International Symposium on On-Line Testing and Robust System Design, IOLTS 2016 ; Conference Date: 4 July 2016 Through 6 July 2016; Conference Code:124500International audienceIntegrated circuits' aging is recognized as a key reliability bottleneck. Its estimation at design time is mandatory to define the lifetime of the circuit and its monitoring during the circuit's operation is necessary to guarantee high performances and avoid timing failures. Various parameters are involved in the process of aging. The knowledge of their impact can help the designer in optimizing the estimation at design time or selecting which parameters are most critical to monitor. This paper presents a fine-grain analysis of the parameters i...
International audienceSelf-Test Libraries (STLs) developed for path-delay faults are crucial to ensu...
This work deals with problems aging of unipolar transistors. In theoretical parts are described the ...
Bias temperature instability (BTI) is recognised as the primary parametric failure mechanism in nano...
Conference of 22nd IEEE International Symposium on On-Line Testing and Robust System Design, IOLTS 2...
As CMOS technologies have shrunk to tens of nanometers, aging problems have emerged as a major chall...
This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important...
University of Minnesota Ph.D. dissertation. April 2010. Major: Electrical Engineering. Advisor: Chri...
Identifying the mechanisms that trigger future chip reliability issues, plus ways to implement aging...
A novel and comprehensive framework for aging analysis is presented in this work, comprehending degr...
Aggressive CMOS technology feature size scaling has been going on for the past decades, while the su...
Analysis of device degradation based on stress experiments is part the process qualification. The im...
Abstract—Circuit reliability is affected by various fabrication-time and run-time effects. Fabricati...
Aging phenomena are first evidenced at device level to cell level considering a precise knowledge of...
The proposed paper addresses the overarching reliability issue of transistor aging in nanometer-scal...
This research developed a framework which analyzes circuit-level reliability and evaluates the lifet...
International audienceSelf-Test Libraries (STLs) developed for path-delay faults are crucial to ensu...
This work deals with problems aging of unipolar transistors. In theoretical parts are described the ...
Bias temperature instability (BTI) is recognised as the primary parametric failure mechanism in nano...
Conference of 22nd IEEE International Symposium on On-Line Testing and Robust System Design, IOLTS 2...
As CMOS technologies have shrunk to tens of nanometers, aging problems have emerged as a major chall...
This book focuses on modeling, simulation and analysis of analog circuit aging. First, all important...
University of Minnesota Ph.D. dissertation. April 2010. Major: Electrical Engineering. Advisor: Chri...
Identifying the mechanisms that trigger future chip reliability issues, plus ways to implement aging...
A novel and comprehensive framework for aging analysis is presented in this work, comprehending degr...
Aggressive CMOS technology feature size scaling has been going on for the past decades, while the su...
Analysis of device degradation based on stress experiments is part the process qualification. The im...
Abstract—Circuit reliability is affected by various fabrication-time and run-time effects. Fabricati...
Aging phenomena are first evidenced at device level to cell level considering a precise knowledge of...
The proposed paper addresses the overarching reliability issue of transistor aging in nanometer-scal...
This research developed a framework which analyzes circuit-level reliability and evaluates the lifet...
International audienceSelf-Test Libraries (STLs) developed for path-delay faults are crucial to ensu...
This work deals with problems aging of unipolar transistors. In theoretical parts are described the ...
Bias temperature instability (BTI) is recognised as the primary parametric failure mechanism in nano...