Thin films of nanocrystalline CuInSe2 were prepared on glass substrates using chemical bath deposition in acidic medium at room temperature. Thickness of the chemically deposited CuInSe2 thin films was ∼100 nm which composed of closely packed irregular grains of ∼100–C120 nm in diameter. X-ray diffraction pattern of CuInSe2 thin films showed nanocrystalline structure with (112) preferential orientation. The films exhibited faint black and direct band gap energy was 0.96 eV
The composition and the microstructure evolutions of CuInSe2 thin films under single-bath electrodep...
Films of $CuInSe_2$ were deposited onto glass substrates by a hot wall deposition method under therm...
AbstractCopper indium diselenide CIS (CuInSe2) thin films are prepared using electrochemical potenti...
In this paper, we report the elaboration and characterization of CuInSe2 thin films prepared by elec...
The copper indium di selenide $(CuInSe_{2})$ Compound was prepared by direct reaction of high-purity...
The ternary semiconductor CuInSe2 is one of the most advantageous materials for the manufacturing of...
CuInSe2 films were prepared by spin-coating and chemical co-reduction method using chlorides and SeO...
CuInSe2 with chalcopyrite structure has become one of the most promising photoelectric materials for...
CuInSe$_{2}$ thin films were prepared by one step electrodeposition from reagents CuSO$_{4}$, In$_{...
Films of CuInSe2 were deposited onto glass substrates by a hot wall deposition method using bulk CuI...
CuInSe2 thin films were deposited onto glass and liquid¿indium¿coated glass substrates by coevaporat...
117-122Copper indium disulphide (CuInS2) thin films have been deposited on glass substrates by vary...
Copper indium diselenide (CuInSe2) layers have been grown at room temperature by electrochemical dep...
In this paper, we report the effect of annealing time on the properties of copper indium diselenide ...
The degradation behavior of CuInSe2 thin film was studied in this project to understand the effects ...
The composition and the microstructure evolutions of CuInSe2 thin films under single-bath electrodep...
Films of $CuInSe_2$ were deposited onto glass substrates by a hot wall deposition method under therm...
AbstractCopper indium diselenide CIS (CuInSe2) thin films are prepared using electrochemical potenti...
In this paper, we report the elaboration and characterization of CuInSe2 thin films prepared by elec...
The copper indium di selenide $(CuInSe_{2})$ Compound was prepared by direct reaction of high-purity...
The ternary semiconductor CuInSe2 is one of the most advantageous materials for the manufacturing of...
CuInSe2 films were prepared by spin-coating and chemical co-reduction method using chlorides and SeO...
CuInSe2 with chalcopyrite structure has become one of the most promising photoelectric materials for...
CuInSe$_{2}$ thin films were prepared by one step electrodeposition from reagents CuSO$_{4}$, In$_{...
Films of CuInSe2 were deposited onto glass substrates by a hot wall deposition method using bulk CuI...
CuInSe2 thin films were deposited onto glass and liquid¿indium¿coated glass substrates by coevaporat...
117-122Copper indium disulphide (CuInS2) thin films have been deposited on glass substrates by vary...
Copper indium diselenide (CuInSe2) layers have been grown at room temperature by electrochemical dep...
In this paper, we report the effect of annealing time on the properties of copper indium diselenide ...
The degradation behavior of CuInSe2 thin film was studied in this project to understand the effects ...
The composition and the microstructure evolutions of CuInSe2 thin films under single-bath electrodep...
Films of $CuInSe_2$ were deposited onto glass substrates by a hot wall deposition method under therm...
AbstractCopper indium diselenide CIS (CuInSe2) thin films are prepared using electrochemical potenti...