Enhancement of quaternary nitrogen doping of graphene oxide via chemical reduction prior to thermal annealing and an investigation of its electrochemical properties

A simple and efficient method to enhance the quaternary nitrogen doping (N-doping) of graphene has been demonstrated. Recent studies have shown that quaternary N in the graphene network provides more efficient electrocatalytic activity. Therefore, a novel strategy to enhance the quaternary N-doping is currently in high demand. The strategy employed in this work was to modify graphene oxide (GO) prior to thermal annealing so as to provide a more efficient structure for quaternary N doping. GO was first chemically reduced with hydrazine to substantially increase the formation of C = C bonds and simultaneously decrease the atomic oxygen concentration. The reduced graphene oxide (RGO) was then annealed in the presence of NH3. Although N-doping via the replacement of oxygen is preferred, the probability of carbon being substituted with N dopants in the graphitic structure of RGO could increase due to the relatively higher content of C = C when compared to the atomic oxygen concentration. In addition, due to the decreased atomic oxygen concentration, the electro-conductivity was enhanced. Cyclic voltammograms (CVs) of 5 mM K3Fe(CN)(6) and 2 mM H2O2 were used to examine the electrochemical response of the quaternary N-maximized RGO. An improvement in electrocatalytic reduction and a higher electro-conductivity were confirmed based on an analysis of the obtained CVs