Fabrication of Flexible and Vertical Silicon Nanowire Electronics

Vertical silicon nanowire (SiNW) array devices directly connected on both sides to metallic contacts were fabricated on various non-Si-based substrates (e.g., glass, plastics, and metal foils) in order to fully exploit the nanomaterial properties for final applications. The devices were realized with uniform length Ag-assisted electroless etched SiNW arrays that were detached from their fabrication substrate, typically Si wafers, reattached to arbitrary substrates, and formed with metallic contacts on both sides of the NW array. Electrical characterization of the SiNW array devices exhibits good current-voltage characteristics consistent with the SiNW morphology.This work is supported by PECASE program. D.R.K acknowledges support from the Link Foundation Energy Fellowship. The authors also thank Chenchen Wang for low-temperature probe station measurement assistance