Driving Method for Compensating Reliability Problem of Hydrogenated Amorphous Silicon Thin Film Transistors and Image Sticking Phenomenon in Active Matrix Organic Light-Emitting Diode Displays

In this paper, we propose a driving method for compensating the electrical instability of hydrogenated amorphous silicon (a-Si: H) thin film transistors (TFTs) and the luminance degradation of organic light-emitting diode (OLED) devices for large active matrix OLED (AMOLED) displays. The proposed driving method senses the electrical characteristics of a-Si: H TFTs and OLEDs using current integrators and compensates them by an external compensation method. Threshold voltage shift is controlled a using negative bias voltage. After applying the proposed driving method, the measured error of the maximum emission current ranges from -1.23 to +1.59 least significant bit (LSB) of a 10-bit gray scale under the threshold voltage shift ranging from -0.16 to 0.17 V. (c) 2011 The Japan Society of Applied PhysicsThis research was supported by a grant (F0004060) from the Information Display R&D Center, one of the Knowledge Economy Frontier R&D programs funded by the Ministry of Knowledge Economy of the Korean government