We report that a TaOx underlayer enhances the stability of perpendicular magnetic anisotropy (PMA) in TaOx/Ta/CoFeB/MgO stacks during annealing; control of oxygen content in the TaOx layer is critical. X-ray photoelectron spectroscopy observations revealed clear suppression of Ta atom diffusion towards the CoFeB/MgO interface or MgO regions. The TaOx underlayer possibly served as a diffusion sponge, permitting some thermally activated Ta atoms to impregnate the TaOx underlayer via a diffusion path, such as grain boundaries. We propose a possible mechanism for enhanced PMA stability based on diffusion of thermally activated Ta atoms.This work was partially supported by a grant from the National Research Foundation of Korea (NRF) funded by th...
The emergence of perpendicular magnetic anisotropy (PMA) in CoFeB/MgO stacks deposited on W using a ...
By systematically comparing the magnetic properties of the Ta/CoFeB/Ta and MgO/CoFeB/MgO structures ...
A very important process step in the fabrication of magnetic tunnel junctions (MTJs) is the applicat...
We describe Ta underlayer thickness influence on thermal stability of perpendicular magnetic anisotr...
This doctoral dissertation describes an experimental study on perpendicular magnetic anisotropy (PMA...
We studied the thermal stability of perpendicular magnetic anisotropy (PMA) in Ta/Mo/CoFeB/MgO/Ta fi...
The recent discovery of perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface has accel...
Ferromagnet/oxide interfaces that ensure perpendicular magnetic anisotropy (PMA) features are critic...
Ferromagnet/oxide interfaces that ensure perpendicular magnetic anisotropy (PMA) features are critic...
The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magneti...
Bouchikhaoui H, Stender P, Balogh Z, et al. Nano-analysis of Ta/FeCoB/MgO tunnel magneto resistance ...
Modern Magnetic Random Access Memories (MRAM) make use of Perpendicular Magnetic Anisotropy (PMA) ma...
International audienceWe investigated and compared the structural and magnetic properties of MgO/FeC...
International audienceWe investigated and compared the structural and magnetic properties of MgO/FeC...
Modern Magnetic Random Access Memories (MRAM) make use of Perpendicular Magnetic Anisotropy (PMA) ma...
The emergence of perpendicular magnetic anisotropy (PMA) in CoFeB/MgO stacks deposited on W using a ...
By systematically comparing the magnetic properties of the Ta/CoFeB/Ta and MgO/CoFeB/MgO structures ...
A very important process step in the fabrication of magnetic tunnel junctions (MTJs) is the applicat...
We describe Ta underlayer thickness influence on thermal stability of perpendicular magnetic anisotr...
This doctoral dissertation describes an experimental study on perpendicular magnetic anisotropy (PMA...
We studied the thermal stability of perpendicular magnetic anisotropy (PMA) in Ta/Mo/CoFeB/MgO/Ta fi...
The recent discovery of perpendicular magnetic anisotropy (PMA) at the CoFeB/MgO interface has accel...
Ferromagnet/oxide interfaces that ensure perpendicular magnetic anisotropy (PMA) features are critic...
Ferromagnet/oxide interfaces that ensure perpendicular magnetic anisotropy (PMA) features are critic...
The effect of a thin Mo dusting layer inserted at the interface of Ta/CoFeB of perpendicular magneti...
Bouchikhaoui H, Stender P, Balogh Z, et al. Nano-analysis of Ta/FeCoB/MgO tunnel magneto resistance ...
Modern Magnetic Random Access Memories (MRAM) make use of Perpendicular Magnetic Anisotropy (PMA) ma...
International audienceWe investigated and compared the structural and magnetic properties of MgO/FeC...
International audienceWe investigated and compared the structural and magnetic properties of MgO/FeC...
Modern Magnetic Random Access Memories (MRAM) make use of Perpendicular Magnetic Anisotropy (PMA) ma...
The emergence of perpendicular magnetic anisotropy (PMA) in CoFeB/MgO stacks deposited on W using a ...
By systematically comparing the magnetic properties of the Ta/CoFeB/Ta and MgO/CoFeB/MgO structures ...
A very important process step in the fabrication of magnetic tunnel junctions (MTJs) is the applicat...