The growth of N-polar GaN films on (0001) Al2O3 substrates by plasma-assisted molecular beam epitaxy was demonstrated using a CrN buffer layer. Analysis of reflection high energy electron diffraction (RHEED) patterns and a chemical etching method were used in order to confirm the polarity of GaN on CrN. RHEED patterns show the 3 × 3 pattern characteristic of GaN. Chemical etching significantly changes the GaN surface morphology which implies that the N-polar GaN was grown on the CrN buffer layer. In addition, an improvement in the crystal properties of GaN was achieved using the annealing process for the CrN buffer layers.This work was supported by the research fund of Hanyang University(HY-2011-00000000229)
The effect of nitridation on the epitaxial growth of GaN on lattice-matched ZrB_2(0001) films prepar...
We report the surface, structural, and optical properties of typical Ga- and N-polar GaN films grown...
We developed a new method of GaN growth using Radical-Enhanced Metalorganic Chemical Vapor Depositio...
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O...
We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN bu...
We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN bu...
This study investigates the crystalline quality, surface, and optical properties of semi-polar GaN (...
GaN epilayers on AlN buffer layers with various thicknesses were grown on sapphire substrates by usi...
The polarity of GaN films grown using GaN and AlN buffer layers on sapphire substrates by molecular ...
Ga-polarity GaN thin films were grown on sapphire (0001) substrates by rf-plasma assisted molecular ...
The polarity of GaNfilmsgrown using GaN and AlNbuffer layers on sapphire substrates by molecular bea...
Growth of GaN by molecular beam epitaxy is ultimately limited by thermal decomposition. Factors infl...
The growth and properties of N-polar GaN layers by metal organic chemical vapor deposition (MOCVD) w...
Achieving nitride-based device structures unaffected by polarization-induced electric fields can be ...
GaN and AlxGa1-xN alloys were grown by gas sourer molecular beam epitaxy using NH3. High quality GaN...
The effect of nitridation on the epitaxial growth of GaN on lattice-matched ZrB_2(0001) films prepar...
We report the surface, structural, and optical properties of typical Ga- and N-polar GaN films grown...
We developed a new method of GaN growth using Radical-Enhanced Metalorganic Chemical Vapor Depositio...
The paper reports on plasma-assisted MBE growth of good quality N-face GaN layers directly on c-Al₂O...
We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN bu...
We demonstrate growing nitrogen-polar (N-polar) GaN epilayer on c-plane sapphire using a thin AlN bu...
This study investigates the crystalline quality, surface, and optical properties of semi-polar GaN (...
GaN epilayers on AlN buffer layers with various thicknesses were grown on sapphire substrates by usi...
The polarity of GaN films grown using GaN and AlN buffer layers on sapphire substrates by molecular ...
Ga-polarity GaN thin films were grown on sapphire (0001) substrates by rf-plasma assisted molecular ...
The polarity of GaNfilmsgrown using GaN and AlNbuffer layers on sapphire substrates by molecular bea...
Growth of GaN by molecular beam epitaxy is ultimately limited by thermal decomposition. Factors infl...
The growth and properties of N-polar GaN layers by metal organic chemical vapor deposition (MOCVD) w...
Achieving nitride-based device structures unaffected by polarization-induced electric fields can be ...
GaN and AlxGa1-xN alloys were grown by gas sourer molecular beam epitaxy using NH3. High quality GaN...
The effect of nitridation on the epitaxial growth of GaN on lattice-matched ZrB_2(0001) films prepar...
We report the surface, structural, and optical properties of typical Ga- and N-polar GaN films grown...
We developed a new method of GaN growth using Radical-Enhanced Metalorganic Chemical Vapor Depositio...