A new decoder-type integrated gate driver with a-Si:H TFTs for active-matrix displays

In this paper, we propose a new integrated hydrogenated amorphous silicon (a-Si: H) thin-film transistor (TFT) gate driver circuit based on a decoder with parallel TFTs. All a-Si: H TFTs in the proposed gate driver have duty ratios of 50% or less to suppress the threshold voltage (V-TH) shift, but at the same time, the output can avoid a high-impedance state to resist against noises. The proposed gate driver also removes dead time, and reduces the circuit area and the number of TFTs compared with the previously reported decoder-type and demultiplexer-type integrated gate drivers. The simulation results show that the rising time and falling time are 2.47 and 2.43 mu s, respectively, with a -5 to 30V output voltage swing, which are suitable for full high-definition (full-HD) format active-matrix displays at a 120Hz frame frequency. (C) 2014 The Japan Society of Applied PhysicsThis research was supported by Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012M3A7B4035201)