Semiconducting properties of amorphous GaZnSnO thin film based on combinatorial electronic structures

Semiconducting properties and electronic structures of amorphous GaZnSnO (GZTO) thin films are investigated with respect to metal cationic composition. An increase of the cationic Sn ratio resulted in an increase of the carrier concentration and a decrease of the mobility of the films. Combinatorial analysis revealed that the electrical characteristics of GZTO films are strongly correlated to changes in electronic structure. The increase in carrier concentration is related to the generation of vacancies by the changes of oxygen coordination around the cationic metal and the shallow band edge state below the conduction band. On the other hand, the decrease of mobility can be explained by the deep band edge state, and the difference between the experimental conduction band and simulated conduction band by the combinatorial electronic structure based on the chemical composition. (C) 2014 AIP Publishing LLC.This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (NRF-2013R1A1A2A10005186) and the "Sensitivity touch platform development and new industrialization support program" through the Ministry of Trade, Industry & Energy, and Korea Institute for Advancement of Technology (R0002657)