Investigating the catalytic effect of Fe(NO3)(3) on the performance of tungsten (W) chemical mechanical planarization in H2O2-based acidic slurries, we found that the trend of the polishing rate with increasing Fe(NO3)(3) concentration was divided into two regions. The polishing rate in region I (<0.10 wt%) increased rapidly because of the increase of the WO3 layer formed by the reaction of Fe(NO3)(3) and H2O2. The polishing rate in region II (>0.10 wt%), on the other hand, increased only slightly with increasing Fe(NO3)(3) concentration. We suggest the excess ferric ions in the slurry were rapidly supplied to the W surface. Consequently, the addition of Fe(NO3)(3) resulted in the rapid formation of the WO3 layer because of th...
Chemical mechanical polishing (CMP) of metals has emerged as a critical process step for the fabrica...
In this project, the W-CMP process was improved by extending the polishing pad life by 3 times by ev...
Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP...
We investigated the effect of the oxidizer K3Fe(CN)(6) on the performance of chemical mechanical pla...
We investigated the effect of the oxidizer K3Fe(CN)6 on the performance of chemical mechanical plana...
In order to obtain tungsten with great surface qualities and high polishing efficiency, a novel meth...
International audienceTungsten is widely used as deposited layer for the multi-level interconnection...
Chemical mechanical polishing (CMP) is one of the important steps that involves during fabrication o...
With shrinkage of the minimum feature size to sub-14 nm, grain topography and protrusion/dishing iss...
In this study, γ-Fe2O3 was grafted with tungstophosphoric acid (i.e., HPW) to improve its selective ...
Chemical mechanical polishing (CMP) is considered to be the enabling technology for meeting the plan...
Tungsten (W) chemical-mechanical planarization (CMP) characteristics are studied systematically for ...
For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechan...
Recycling abrasive slurry that has been used in chemical mechanical polishing (CMP) is one of the op...
International audienceRecycling abrasive slurry that has been used in chemical mechanical polishing ...
Chemical mechanical polishing (CMP) of metals has emerged as a critical process step for the fabrica...
In this project, the W-CMP process was improved by extending the polishing pad life by 3 times by ev...
Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP...
We investigated the effect of the oxidizer K3Fe(CN)(6) on the performance of chemical mechanical pla...
We investigated the effect of the oxidizer K3Fe(CN)6 on the performance of chemical mechanical plana...
In order to obtain tungsten with great surface qualities and high polishing efficiency, a novel meth...
International audienceTungsten is widely used as deposited layer for the multi-level interconnection...
Chemical mechanical polishing (CMP) is one of the important steps that involves during fabrication o...
With shrinkage of the minimum feature size to sub-14 nm, grain topography and protrusion/dishing iss...
In this study, γ-Fe2O3 was grafted with tungstophosphoric acid (i.e., HPW) to improve its selective ...
Chemical mechanical polishing (CMP) is considered to be the enabling technology for meeting the plan...
Tungsten (W) chemical-mechanical planarization (CMP) characteristics are studied systematically for ...
For scaling-down advanced nanoscale semiconductor devices, tungsten (W)-film surface chemical mechan...
Recycling abrasive slurry that has been used in chemical mechanical polishing (CMP) is one of the op...
International audienceRecycling abrasive slurry that has been used in chemical mechanical polishing ...
Chemical mechanical polishing (CMP) of metals has emerged as a critical process step for the fabrica...
In this project, the W-CMP process was improved by extending the polishing pad life by 3 times by ev...
Topography of tungsten should be assured at a minimum through chemical mechanical planarization (CMP...