Enhanced light extraction from Y2O3:Eu3+ phosphor films via vacuum nano-imprint lithography using spin-on dielectric materials

This paper reports a simple process to enhance the extraction efficiency of photoluminescence from Eu-doped yttrium oxide (Y2O3:Eu3+) thin-film phosphor. The two-dimensional (2D) SiO2 photonic crystal layer was fabricated by vacuum nano-imprint method using a conventional spin-on dielectric solution as a nano-imprint resin and a 2D patterned Si stamp. The applied pressure and temperature of the patterning and annealing process facilitates the conversion of the spin-on dielectric solution into a SiO2 hemisphere structure resulting in high definition transfer of the 2D reverse pattern of the Si mold. The light extraction efficiency of the Y2O3:Eu3+ thin-film phosphor assisted by 2D SiO2 photonic crystal layer was approximately 1.72 times higher than that of the conventional Y2O3:Eu3+ thin-film phosphor. (C) 2013 Elsevier B. V. All rights reserved.Thisworkwas supported by the research fund of Hanyang University(HYU-2012-T), a Platform Project grant (10033636-2012-11) founded by the Ministry of Knowledge Economy of Korea. This work was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2012?0015035)