We investigated the effect of photon irradiation with various energies on the gate bias instability of indium-gallium-zinc oxide transistors. The illumination of red and green light on the transistor caused positive threshold voltage (V-th) shifts of 0.23 V and 0.18 V. respectively, while it did not affect the V-th value in blue light after a positive bias stress. However, the stability of transistors was deteriorated with increasing photon energy after a negative bias stress: negative V-th shifts for red (-0.23 V) and blue light (-3.7 V). This difference can be explained by the compensation effect of the electron carrier trapping and the creation of meta-stable donors via photon excitation. (C) 2011 Elsevier Ltd. All rights reserved.This r...
The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in...
Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-ox...
The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-gallium-zinc ...
Stress/recovery measurements demonstrate that even highperformance passivated In-Zn-O/ Ga-In-Zn-O th...
Stress/recovery measurements demonstrate that even high-performance passivated In-Zn-O/ Ga-In-Zn-O t...
We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of...
This study examined the effect of gate dielectric materials on the light-induced bias instability of...
The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (Vth) of amorphous i...
We have investigated a stability of oxide TFTs (IGZO) under electrical bias and monochromatic light ...
The effect of exposure to ultraviolet radiation on the characteristics of amorphous indium-gallium-z...
The effect of ITO and Mo electrodes on the electrical properties and stability of In-Ga-Zn-O (IGZO) ...
Amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) is a promising material for active channels in thin fil...
Two different types of In-Ga-Zn-O thin-film transistors, each passivated with SiO(x) and SiN(x), wer...
The analysis of current-voltage (I-V) and capacitance-voltage (C-V) characteristics for amorphous in...
It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gall...
The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in...
Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-ox...
The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-gallium-zinc ...
Stress/recovery measurements demonstrate that even highperformance passivated In-Zn-O/ Ga-In-Zn-O th...
Stress/recovery measurements demonstrate that even high-performance passivated In-Zn-O/ Ga-In-Zn-O t...
We have studied the effect of top gate bias (VTG) on the generation of photocurrent and the decay of...
This study examined the effect of gate dielectric materials on the light-induced bias instability of...
The effect of short-duration ultraviolet (UV) exposure on the threshold voltage (Vth) of amorphous i...
We have investigated a stability of oxide TFTs (IGZO) under electrical bias and monochromatic light ...
The effect of exposure to ultraviolet radiation on the characteristics of amorphous indium-gallium-z...
The effect of ITO and Mo electrodes on the electrical properties and stability of In-Ga-Zn-O (IGZO) ...
Amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) is a promising material for active channels in thin fil...
Two different types of In-Ga-Zn-O thin-film transistors, each passivated with SiO(x) and SiN(x), wer...
The analysis of current-voltage (I-V) and capacitance-voltage (C-V) characteristics for amorphous in...
It has been previously observed that thin film transistors (TFTs) utilizing an amorphous indium gall...
The photoleakage current and the negative bias and illumination stress (NBIS)-induced instability in...
Electrical bias and light stressing followed by natural recovery of amorphous hafnium-indium-zinc-ox...
The electrical instability behaviors of a positive-gate-bias-stressed amorphous indium-gallium-zinc ...