INFRARED DIODE LASER SPECTROSCOPY OF JET-COOLED CARBON, SILICON-CARBON, AND SILICON CLUSTERS

1. T.F. Giesen, A. Van Orden, H.J. Hwang, R.S. Fellers, R.A. Provencal, and R. Saykally, ""Infrared Laser Spectroscopy of the Linear $C_{13}$ Carbon Cluster,'' Science 265, 756 (1994). 2. A. Van Orden. T.F. Giesen, R.A. Provencal, H.J. Hwang. and R.J. Saykally, ""Chracterization of Silicon-Carbon Clusters by Infrared Laser Spectroscopy: The $\nu_{3}(\sigma_{u})$ Band of Linear $Si_{2}C_{3}$,'' J. Chem. Phys. 101, 10237(1994). 3. A. Van Orden, R.A. Provencal, T.F. Giesen, and R.J. Saykally, ""Characterization of Silicon-Carbon Clustrs by Infrared Laser Spectroscopy: The $\nu_{1}$ Band of $SiC_{4}$.'' Chem. Phys. Lett. (submitted 1995).Author Institution: University of California, Berkeley, CA 94720; der Universität zu Köln, 50937 Köln, GermanyA laser vaporization-supersonic cluster beam apparatus is used to observe rovibrational spectra of carbon, silicon-carbon, and silicon clusters by infrared diode laser spectroscopy. Such questions as the evolution of structural properties with increasing cluster size and the nature of chemical bonding in carbon and silicon are deduced from the spectroscopic data The $C_{3}-C_{7}, C_{9}$, and $C_{13}$ carbon $clusters^{1}$ and the $SiC_{4}$ and $Si_{2}C_{3}$ silicon-carbon $clusters^{2,3}$ have been characterized Previously. The latest results of this research will be presented