Multiple luminescence peaks emitted by a single InGaN/GaN quantum-well(QW) nanorod, extending from the blue to the red, were analysed by a combination of electron microscope based imaging techniques. Utilizing the capability of cathodoluminescence hyperspectral imaging it was possible to investigate spatial variations in the luminescence properties on a nanoscale. The high optical quality of a single GaN nanorod was demonstrated, evidenced by a narrow band-edge peak and the absence of any luminescence associated with the yellow defect band. Additionally two spatially confined broad luminescence bands were observed, consisting of multiple peaks ranging from 395 nm to 480 nm and 490 nm to 650 nm. The lower energy band originates from broad c-...
International audienceThe optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN n...
International audienceThe optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN n...
Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in ...
Multiple luminescence peaks emitted by a single InGaN/GaN quantum-well(QW) nanorod, extending from t...
Multiple luminescence peaks emitted by a single InGaN/GaN quantum-well(QW) nanorod, extending from t...
InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral...
GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate mate...
GaN InGaN multiple quantum wells MQW and GaN nanorods have been widely studied as a candidate mate...
GaN InGaN multiple quantum wells MQW and GaN nanorods have been widely studied as a candidate mate...
GaN InGaN multiple quantum wells MQW and GaN nanorods have been widely studied as a candidate mate...
Significant improvements in the efficiency of optoelectronic devices can result from the exploitatio...
Measurements of light emission from GaN nanorods of diameter between 80 and 350 nm, containing eithe...
Optoelectronic devices based on the III-nitride system exhibit remarkably good optical efficiencies ...
The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been stud...
International audienceThe optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN n...
International audienceThe optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN n...
International audienceThe optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN n...
Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in ...
Multiple luminescence peaks emitted by a single InGaN/GaN quantum-well(QW) nanorod, extending from t...
Multiple luminescence peaks emitted by a single InGaN/GaN quantum-well(QW) nanorod, extending from t...
InGaN/GaN multiple quantum wells (MQWs) have been studied by using cathodoluminescence hyperspectral...
GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate mate...
GaN InGaN multiple quantum wells MQW and GaN nanorods have been widely studied as a candidate mate...
GaN InGaN multiple quantum wells MQW and GaN nanorods have been widely studied as a candidate mate...
GaN InGaN multiple quantum wells MQW and GaN nanorods have been widely studied as a candidate mate...
Significant improvements in the efficiency of optoelectronic devices can result from the exploitatio...
Measurements of light emission from GaN nanorods of diameter between 80 and 350 nm, containing eithe...
Optoelectronic devices based on the III-nitride system exhibit remarkably good optical efficiencies ...
The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been stud...
International audienceThe optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN n...
International audienceThe optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN n...
International audienceThe optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN n...
Controlling the long-range homogeneity of core-shell InGaN/GaN layers is essential for their use in ...