<p>Elasto-plastic mechanical deformation behaviors of c-plane (0001) and nonpolar GaN single crystals are studied using nanoindentation, cathodoluminescence, and transmission electron microscopy. Nanoindentation tests show that c-plane GaN is less susceptible to plastic deformation and has higher hardness and Young's modulus than the nonpolar GaN. Cathodoluminescence and transmission electron microscopy characterizations of indent-induced plastic deformation reveal that there are two primary slip systems for the c-plane GaN, while there is only one most favorable slip system for the nonplane GaN. We suggest that the anisotropic elasto-plastic mechanical properties of GaN are relative to its anisotropic plastic deformation behavior.PACS: 62....
The growth and optoelectronic properties of core-shell nanostructures are influenced by the strain i...
Atomistic simulations of uniaxial straining of three-dimensional nanocrystalline palladium along dif...
The elastic properties of gallium nitride (GaN) nanowires with different structures were investigate...
The deformation behavior of as-grown and ion-beam-modified wurtzite GaN films is studied by nanoinde...
Abstract In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire b...
GaN wurtzite crystal is commonly regarded as eminently brittle. However, our research demonstrates ...
Mechanical properties of gallium nitride (GaN) single crystals upon carbon ion irradiation are exami...
The mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by sphe...
Journal of Applied Physics, 101(8): pp. 083522.In this work, spherical nanoindentation—with nanoinde...
The mechanical properties of surfaces and nanostructures deviate from their bulk counterparts due to...
Funding Information: We gratefully acknowledge Prof. Shuji Nakamura (University of California, Santa...
The B3-GaN thin film was investigated by performing large-scale molecular dynamics (MD) simulation o...
Details of indentation-induced mechanical deformation of GaAs, InP and GaN have been studied. In par...
AbstractDetails of Berkovich nanoindentation-induced mechanical deformation mechanisms of single-cry...
Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical inde...
The growth and optoelectronic properties of core-shell nanostructures are influenced by the strain i...
Atomistic simulations of uniaxial straining of three-dimensional nanocrystalline palladium along dif...
The elastic properties of gallium nitride (GaN) nanowires with different structures were investigate...
The deformation behavior of as-grown and ion-beam-modified wurtzite GaN films is studied by nanoinde...
Abstract In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire b...
GaN wurtzite crystal is commonly regarded as eminently brittle. However, our research demonstrates ...
Mechanical properties of gallium nitride (GaN) single crystals upon carbon ion irradiation are exami...
The mechanical deformation of wurtzite GaN epilayers grown on sapphire substrates is studied by sphe...
Journal of Applied Physics, 101(8): pp. 083522.In this work, spherical nanoindentation—with nanoinde...
The mechanical properties of surfaces and nanostructures deviate from their bulk counterparts due to...
Funding Information: We gratefully acknowledge Prof. Shuji Nakamura (University of California, Santa...
The B3-GaN thin film was investigated by performing large-scale molecular dynamics (MD) simulation o...
Details of indentation-induced mechanical deformation of GaAs, InP and GaN have been studied. In par...
AbstractDetails of Berkovich nanoindentation-induced mechanical deformation mechanisms of single-cry...
Wurtzite GaN films grown on sapphire substrates are studied by nanoindentation with a spherical inde...
The growth and optoelectronic properties of core-shell nanostructures are influenced by the strain i...
Atomistic simulations of uniaxial straining of three-dimensional nanocrystalline palladium along dif...
The elastic properties of gallium nitride (GaN) nanowires with different structures were investigate...