Add to ORKG<div id="articleAbsctract"> <p> Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.</p> </div
International audienceThis article investigates several thermal management techniques for GaN transi...
In this letter, thermal analysis results of AlGaN/GaN HEMTs grown on SiC, Si and Sapphire substrates...
In this work we present a novel and comprehensive method for thermal characterization of GaN based t...
<div id="articleAbsctract"> <p> Using the finite-element method, the thermal resistances of GaN l...
<div class="aip-paragraph">An expression of the relation between junction temperature and forward vo...
We present a highly precise method to determine the thermal resistance and the antiguiding factor of...
<p> Thermal management is one of the most important factors affecting the performance of high power...
Abstract: Time2dependent t hermal simulation of ridge2geomet ry In GaN laser diodes is car ried out ...
With the continuous increase of the output power of semiconductor laser array, the heat generation i...
Abstract Thermal effect of semiconductor lasers is the biggest challenge to the development of semic...
Modern electronics are increasingly more capable of high-power density operation, which presents imp...
Thermo-mechanical stress occurring during the packaging process and during operation limits the reli...
wan hermal imager Power electronics Thermal management package. Experimental tests of a 30 mm gate-p...
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based lig...
© 2011-2012 IEEE. A new thermal model based on a distributed and fast modeling approach for the mode...
International audienceThis article investigates several thermal management techniques for GaN transi...
In this letter, thermal analysis results of AlGaN/GaN HEMTs grown on SiC, Si and Sapphire substrates...
In this work we present a novel and comprehensive method for thermal characterization of GaN based t...
<div id="articleAbsctract"> <p> Using the finite-element method, the thermal resistances of GaN l...
<div class="aip-paragraph">An expression of the relation between junction temperature and forward vo...
We present a highly precise method to determine the thermal resistance and the antiguiding factor of...
<p> Thermal management is one of the most important factors affecting the performance of high power...
Abstract: Time2dependent t hermal simulation of ridge2geomet ry In GaN laser diodes is car ried out ...
With the continuous increase of the output power of semiconductor laser array, the heat generation i...
Abstract Thermal effect of semiconductor lasers is the biggest challenge to the development of semic...
Modern electronics are increasingly more capable of high-power density operation, which presents imp...
Thermo-mechanical stress occurring during the packaging process and during operation limits the reli...
wan hermal imager Power electronics Thermal management package. Experimental tests of a 30 mm gate-p...
We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based lig...
© 2011-2012 IEEE. A new thermal model based on a distributed and fast modeling approach for the mode...
International audienceThis article investigates several thermal management techniques for GaN transi...
In this letter, thermal analysis results of AlGaN/GaN HEMTs grown on SiC, Si and Sapphire substrates...
In this work we present a novel and comprehensive method for thermal characterization of GaN based t...