Large tunnel magnetoresistance in tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode

Ebke D, Schmalhorst J-M, Liu N-N, Thomas A, Reiss G, Hütten A. Large tunnel magnetoresistance in tunnel junctions with Co2MnSi/Co2FeSi multilayer electrode. APPLIED PHYSICS LETTERS. 2006;89(16): 162506.Two kinds of magnetic tunnel junctions with Co2FeSi electrodes are compared. Using Co2FeSi single layers a tunnel magnetoresistance of 52% is reached, whereas the magnetization of the Co2FeSi is only 75% of the expected value. By using [Co2MnSi/Co2FeSi](x10) multilayer electrodes the magnetoresistance can be increased to 114% and the full bulk magnetization is reached. All junctions show an inverse tunnel magnetoresistance, when the electrons are tunneling from the Co-Fe into the Heusler compound electrode. This results from a special band structure feature of full Heusler compounds, which is robust even for atomic disorder in the films