An improved sic-mosfet gate driver circuit controlled by DSPIC33FJ256GP710A

SIC-MOSFETs are commonly used in high power inverter and converter circuits and can require significant isolated gate drive power to switch optimally. One of the main requirements for an optocoupler gate driver circuit is the ability to provide high output peak current to charge or discharge the drive transistor quickly to prevent loss of switch. This paper describes the new SICMOSET gate driver circuit, the performance characteristics it needs, and how to give advantages over alternative gate driver circuits. The same considerations apply to the original to MOSFET and IGBT. The dsPIC33FJ256GP710A is one of the microcontroller family made by microchip technology and was used as a microcontroller to generate the PWM with high frequency. The principles of operation and design requirements of the circuit are presented in this paper. Also, the experimental results are presented to demonstrate the efficient functioning of the designed circuit. The circuit's feature is designed with DC insulation and full high-current circuit protection at the output side