Starting from the multiple trapping rate equations that define the non-equilibrium concentrations of electrons and holes in extended states, the thermally stimulated conductivity (TSC) experiment is examined. A system of non-linear coupled differential equations is solved to get the temporal evolution of the occupation functions and the carrier concentrations during the initial isothermal waiting time and the subsequent heating at a constant rate. The simulated TSC spectra reproduce the reported dependence of the measured spectra on the heating rate and the starting temperature. An approximate expression to obtain the DOS distribution in the upper half of the band gap from TSC spectra is deduced. The application of this expression to simula...
In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited b...
Historically, it has been difficult to correlate the leakage current of capacitor structures involvi...
An expression for the density of states (DOS) distribution in disordered semiconductors based on tra...
We apply computer modelling to the multiple-trapping rate equations governing the time-evolution of ...
The paper reports on thermally stimulated conductivity studies used for characterization of the dens...
This paper investigates the robustness of the thermally stimulated current technique as a method to ...
En este trabajo se presenta un estudio de la densidad de estados (DOS) obtenida en muestras de silic...
En este trabajo, se presenta un estudio detallado del método de la conductividad térmicamente estimu...
Different methods have been proposed to use modulated photoconductivity (MPC) measurements in order ...
In this work, we report on a model that describes the microscopic electrical transport as a transmis...
A thorough study on the distribution of defect-related active energy levels has been performed on na...
In this work, a detailed study of thermally stimulated con- ductivity technique (TSC) is presented. ...
A new method for measuring the free carriers lifetime (Tr) and the density of localised states (DOS)...
This paper presents the determination of the density of states (DOS) in the energy gap from the Ferm...
The Thermally Stimulated Discharge Current (TSDC) technique has been extensively utilized to study f...
In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited b...
Historically, it has been difficult to correlate the leakage current of capacitor structures involvi...
An expression for the density of states (DOS) distribution in disordered semiconductors based on tra...
We apply computer modelling to the multiple-trapping rate equations governing the time-evolution of ...
The paper reports on thermally stimulated conductivity studies used for characterization of the dens...
This paper investigates the robustness of the thermally stimulated current technique as a method to ...
En este trabajo se presenta un estudio de la densidad de estados (DOS) obtenida en muestras de silic...
En este trabajo, se presenta un estudio detallado del método de la conductividad térmicamente estimu...
Different methods have been proposed to use modulated photoconductivity (MPC) measurements in order ...
In this work, we report on a model that describes the microscopic electrical transport as a transmis...
A thorough study on the distribution of defect-related active energy levels has been performed on na...
In this work, a detailed study of thermally stimulated con- ductivity technique (TSC) is presented. ...
A new method for measuring the free carriers lifetime (Tr) and the density of localised states (DOS)...
This paper presents the determination of the density of states (DOS) in the energy gap from the Ferm...
The Thermally Stimulated Discharge Current (TSDC) technique has been extensively utilized to study f...
In this work, a series of boron-doped microcrystalline silicon samples [μc-Si:H(B)] were deposited b...
Historically, it has been difficult to correlate the leakage current of capacitor structures involvi...
An expression for the density of states (DOS) distribution in disordered semiconductors based on tra...