Manganite-based three level memristive devices with self-healing capability
- Roman Acevedo, Wilson Stibens
- Rubi, Diego
- Lecourt, J.
- Luders, U.
- Gomez Marlasca, F.
- Granell, Pablo Nicolás
- Golmar, Federico
- Levy, Pablo Eduardo
DOIAbstract
We report on non-volatile memory devices based on multifunctional manganites. The electric field induced resistive switching of Ti/La1/3Ca2/3MnO3/n-Si devices is explored using different measurement protocols. We show that using current as the electrical stimulus (instead of standard voltage-controlled protocols) improves the electrical performance of our devices and unveils an intermediate resistance state. We observe three discrete resistance levels (low, intermediate and high), which can be set either by the application of current–voltage ramps or by means of single pulses. These states exhibit retention and endurance capabilities exceeding 104 s and 70 cycles, respectively. We rationalize our experimental observations by proposing a mix...
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