We probe the resistive switching response of Au/TiO2/Cu junctions, on samples initialized using both polarities electroforming. A conductive path is formed in both cases: a copper metallic filament for negative electroforming and a titanium dioxide possibly Magneli phase based filament for the positive case. We measured the resistance response of formed samples and studied their remanent resistance states. Bi (tri) stable resistance states were obtained for negative (positive) electroformed samples. The temperature dependence of the resistance discloses the underlying different nature of the associated filaments. In addition, we performed ab initio calculations to estimate the observed electroforming threshold voltages.Fil: Ghenzi, Néstor. ...
We study micro-scale TiO2 junctions that are suitable to be used as resistive random-access memory n...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
Physical mechanisms underlying the multilevel resistive tuning over seven orders of magnitude in str...
We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively...
We report the resistive switching (RS) characteristics of Al/TiO2/Au memristive cells fabricated in ...
Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer depositio...
Combining delamination technique with conductive AFM, we have been able to reveal spatially resolved...
We measured and analyzed the dynamic and remnant current-voltages curves of Al/TiO2/Au and Ni/TiO2/N...
A modified biasing scheme was adopted to improve the electrical endurance characteristics of conduct...
Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltag...
In recent years, memristors have attracted great attention owing to their simple fabrication process...
In this work we present a Conducting Atomic Force Microscopy (CAFM) study of TiO2 thin films that di...
The resistive switching behavior of TiO2 based electronic devices have been extensively investigated...
The continuing improved performance of the digital electronic devices requires new memory technologi...
Resistance switching devices based on transition metal oxides have generated significant research in...
We study micro-scale TiO2 junctions that are suitable to be used as resistive random-access memory n...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
Physical mechanisms underlying the multilevel resistive tuning over seven orders of magnitude in str...
We report on the electroforming in resistively switching nanocrosspoint devices made of a reactively...
We report the resistive switching (RS) characteristics of Al/TiO2/Au memristive cells fabricated in ...
Titanium dioxide thin films (30 nm) are deposited on platinized substrates by atomic layer depositio...
Combining delamination technique with conductive AFM, we have been able to reveal spatially resolved...
We measured and analyzed the dynamic and remnant current-voltages curves of Al/TiO2/Au and Ni/TiO2/N...
A modified biasing scheme was adopted to improve the electrical endurance characteristics of conduct...
Pt/TiO2/Pt/Ti memristive devices were electrically formed to either the ON or OFF state using voltag...
In recent years, memristors have attracted great attention owing to their simple fabrication process...
In this work we present a Conducting Atomic Force Microscopy (CAFM) study of TiO2 thin films that di...
The resistive switching behavior of TiO2 based electronic devices have been extensively investigated...
The continuing improved performance of the digital electronic devices requires new memory technologi...
Resistance switching devices based on transition metal oxides have generated significant research in...
We study micro-scale TiO2 junctions that are suitable to be used as resistive random-access memory n...
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustab...
Physical mechanisms underlying the multilevel resistive tuning over seven orders of magnitude in str...