HfO2 based memory devices with rectifying capabilities
- Quinteros, Cynthia Paula
- Zaspe, R.
- Marlasca, F. G.
- Golmar, Federico
- Casanova, F.
- Stoliar, Pablo Alberto
- Hueso, L.
- Levy, Pablo Eduardo
DOIAbstract
We report on the fabrication and characterization of metal/insulator/metal capacitor like devices, with both rectifying and hysteretic features. Devices are formed by two junctions, Ti/HfO2 and Co/HfO2. Each junction exhibits highly repetitive hysteretic I-V curves with a sharp transition from a high to a low resistance state (3–4 orders of magnitude jump). The opposite transition (from low to high) is induced by polarity reversal. The rectifying non-crossing characteristics of the I-V branches denote their potential use as a multifunctional device, acting as a built-in rectifier and memory cell in a single device. Based on the phenomenological model description by Zazpe et al. [Appl. Phys. Lett. 103, 073114 (2013)], we propose a circuital ...
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