Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K

LANZONI M
MANFREDI M
SELMI, Luca
SANGIORGI, Enrico
CAPPELLETTI R
RICCO B.

Open link

Publication date

January 1989

DOI

10.1109/55.31711

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Abstract

A detailed experimental study of the spectral distribution of hot-electron-induced photon emission in n-channel MOSFETs is presented. The study significantly improves on previous work by considering energies up to 3.1 eV and different operating temperatures. It is shown that in contrast with previous results, the photon energy distribution is markedly non-Maxwellian, thus suggesting that the same is true for the energy distribution of the channel electrons

Extracted data

We use cookies to provide a better user experience.

Data Protection

Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K

Abstract

Extracted data

Hot-Electron induced Photon Energies in n-channel MOSFET’s operating at 77 and 300 K

Abstract

Extracted data

Related items

Related items