Topics
inversion layerSettlement
Monte-CarloMusic genre
A recently developed self-consistent Monte-Carlo (MC) simulator of confined electron's transport in the inversion layer of nano-MOSFETs is used to analyze three nano-scale ultra-thin body (UTB) SOI MOSFETs. The effect of the subband structure and carrier degeneracy as well as the relative importance of different scattering mechanisms is discussed
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
A recently developed self-consistent Monte-Carlo (MC) simulator of confined electron's transport in ...
A recently developed self-consistent Monte-Carlo (MC) simulator of confined electron's transport in ...
This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The ...
This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The ...
This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The ...
The design of nanoscale CMOS devices poses new challenges to the TCAD community. The potential advan...
A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effect...
A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effect...
A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effect...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
A recently developed self-consistent Monte-Carlo (MC) simulator of confined electron's transport in ...
A recently developed self-consistent Monte-Carlo (MC) simulator of confined electron's transport in ...
This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The ...
This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The ...
This paper presents a new self-consistent MC simulator for the 2D electron gas of nano-MOSFETs. The ...
The design of nanoscale CMOS devices poses new challenges to the TCAD community. The potential advan...
A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effect...
A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effect...
A conventional Monte-Carlo simulator has been extended to include electrostatic and transport effect...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport...
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