This chapter overviews the basic physical effects involved in programming and erasing of Flash memory cells, to provide the background for a deeper understanding of their operation and reliability. In particular, tunnelling and high field transport are treated and the associated phenomena in MOS-FETs and Flash cells are described by means of measurements and simulations. Device degradation induced by charge injection into thin silicon dioxide layers is also briefly discussed
Flash memories represent today a mainstream technology, finding ever increasing applications for bot...
The basic reliability issues of Charge Trapping (CT) Flash memory devices will be discussed from a p...
Most of the current applications of electronics require non-volatile memories, which can keep stored...
This chapter overviews the basic physical effects involved in programming and erasing of Flash memor...
In this paper, a complete study of the cell reliability based on a unique oxide damage characterizat...
In this paper, through the use of a recently proposed statistical model of stress-induced leakage cu...
Experimental data and analysis show that overerase effects in NOR Flash memories increase with the e...
International audienceAn in-depth investigation of NOR flash degradation occurring during Fowler-Nor...
A new statistical model of stress-induced leakage current (SILC) is implemented and used to predict ...
The continuous demand for NAND flash memories with higher performance and storage capabilities pushe...
Low power consumption, virtually zero latency, extremely fast boot-up for OS and applications, fast ...
The aim of this paper is to give a thorough overview of Flash memory cells. Basic operations and cha...
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and cha...
This work is focused on the accelerated testing of Flash memory reliability, taking our 45 nm NOR te...
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and cha...
Flash memories represent today a mainstream technology, finding ever increasing applications for bot...
The basic reliability issues of Charge Trapping (CT) Flash memory devices will be discussed from a p...
Most of the current applications of electronics require non-volatile memories, which can keep stored...
This chapter overviews the basic physical effects involved in programming and erasing of Flash memor...
In this paper, a complete study of the cell reliability based on a unique oxide damage characterizat...
In this paper, through the use of a recently proposed statistical model of stress-induced leakage cu...
Experimental data and analysis show that overerase effects in NOR Flash memories increase with the e...
International audienceAn in-depth investigation of NOR flash degradation occurring during Fowler-Nor...
A new statistical model of stress-induced leakage current (SILC) is implemented and used to predict ...
The continuous demand for NAND flash memories with higher performance and storage capabilities pushe...
Low power consumption, virtually zero latency, extremely fast boot-up for OS and applications, fast ...
The aim of this paper is to give a thorough overview of Flash memory cells. Basic operations and cha...
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and cha...
This work is focused on the accelerated testing of Flash memory reliability, taking our 45 nm NOR te...
The aim of this paper is to give a thorough overview of flash memory cells. Basic operations and cha...
Flash memories represent today a mainstream technology, finding ever increasing applications for bot...
The basic reliability issues of Charge Trapping (CT) Flash memory devices will be discussed from a p...
Most of the current applications of electronics require non-volatile memories, which can keep stored...
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