In this paper, a review on characterization of transistors in nano dimension for improving ICs integration was presented. Various novel device structures are being extensively explored because the conventional silicon MOSFET has scaling limits. This work was focused on fabrication technology and characterization of nanowire transistor, FinFET transistor, and carbon nanotube transistor and its applications
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
Abstract—This review paper explores considerations for ul-timate CMOS transistor scaling. Transistor...
As metal oxide semiconductor field effect transistors (MOSFETs) near the ballistic limit, new device...
In this paper, a review on characterization of transistors in nano dimension for improving ICs integ...
Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all d...
Since the invention of the transistor, the fundamental element of the integrated circuit (IC) in 196...
In the last few years, the leading semiconductor industries have introduced multi-gate non-planar tr...
As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effec...
This paper review the FinFET structure as a future transistor for analog and digital electronic circ...
This paper review the FinFET structure as a future transistor for analog and digital electronic circ...
This paper presents a comprehensive outlook for the current technology status and the prospective up...
Abstract—Recently there has been tremendous progress made in the research of novel nanotechnology fo...
As the era of classical planar metal-oxide-semiconductor field-effect transistors (MOSFETs) comes to...
Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the ...
As the transistor size is reduced below Sub-50nm to achieve faster circuits and better performance, ...
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
Abstract—This review paper explores considerations for ul-timate CMOS transistor scaling. Transistor...
As metal oxide semiconductor field effect transistors (MOSFETs) near the ballistic limit, new device...
In this paper, a review on characterization of transistors in nano dimension for improving ICs integ...
Nano-sheet transistor can be defined as a stacked horizontally gate surrounding the channel on all d...
Since the invention of the transistor, the fundamental element of the integrated circuit (IC) in 196...
In the last few years, the leading semiconductor industries have introduced multi-gate non-planar tr...
As the scaling down of silicon MOSFET is approaching its utmost limit, different materials are effec...
This paper review the FinFET structure as a future transistor for analog and digital electronic circ...
This paper review the FinFET structure as a future transistor for analog and digital electronic circ...
This paper presents a comprehensive outlook for the current technology status and the prospective up...
Abstract—Recently there has been tremendous progress made in the research of novel nanotechnology fo...
As the era of classical planar metal-oxide-semiconductor field-effect transistors (MOSFETs) comes to...
Scaling process of silicon transistor, particularly MOSFET, in the past decades had increased the ...
As the transistor size is reduced below Sub-50nm to achieve faster circuits and better performance, ...
Since the introduction of the transistor and the integrated circuit, the semiconductor industry has ...
Abstract—This review paper explores considerations for ul-timate CMOS transistor scaling. Transistor...
As metal oxide semiconductor field effect transistors (MOSFETs) near the ballistic limit, new device...