Computational fluid dynamics investigations on the mixing process of gases inside an atomic layer deposition (ALD) reactor are carried out. A test case involving a real ALD reactor geometry is investigated under nonreacting, incompressible flow assumption. The relatively low Reynolds number (Re) of the test reactor, often being in the laminar regime, advocates the usage of scale-resolving simulations. The authors investigate mixing of two precursors in two different injection configurations for 40 < Re < 2400. The feasibility of the approach is shown and discussed. The results illustrate how both Reynolds number and injection configurations influence the precursor distribution in the ALD reactor. The authors also carry out a set of experime...
A detailed model for the operation of a flow type atomic layer deposition (ALD) reactor is developed...
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2010.This ele...
Abstract: Tremendous interest has been drawn towards the atomic layer deposition (ALD) as an ultrath...
Computational fluid dynamics investigations on the mixing process of gases inside an atomic layer de...
International audienceA three-dimensional Computational Fluid Dynamics model is built for a commerci...
National audienceA three-dimensional Computational Fluid Dynamics (CFD) model is built for a Cambrid...
The requirements of the microelectronic industry, producing high quality electronic devices, has led...
In order to minimize the operational time of atomic layer deposition (ALD) process, flow transports ...
A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor ...
Abstract: In recent years, industry is ever striving to deposit optimal thin films on Nano devices. ...
Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining moment...
This paper characterizes the carrier gas flow in the atomic layer deposition (ALD) vacuum reactor by...
This work develops a first-principles-based three-dimensional, multiscale computational fluid dynami...
Abstract: Low throughput is a major limitation for industrial level atomic layer deposition (ALD) ap...
A detailed model for the operation of a flow type atomic layer deposition (ALD) reactor is developed...
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2010.This ele...
Abstract: Tremendous interest has been drawn towards the atomic layer deposition (ALD) as an ultrath...
Computational fluid dynamics investigations on the mixing process of gases inside an atomic layer de...
International audienceA three-dimensional Computational Fluid Dynamics model is built for a commerci...
National audienceA three-dimensional Computational Fluid Dynamics (CFD) model is built for a Cambrid...
The requirements of the microelectronic industry, producing high quality electronic devices, has led...
In order to minimize the operational time of atomic layer deposition (ALD) process, flow transports ...
A calculation model to study atomic layer deposition (ALD) in low-pressure channel-type CVD reactor ...
Abstract: In recent years, industry is ever striving to deposit optimal thin films on Nano devices. ...
Within the materials deposition techniques, Spatial Atomic Layer Deposition (SALD) is gaining moment...
This paper characterizes the carrier gas flow in the atomic layer deposition (ALD) vacuum reactor by...
This work develops a first-principles-based three-dimensional, multiscale computational fluid dynami...
Abstract: Low throughput is a major limitation for industrial level atomic layer deposition (ALD) ap...
A detailed model for the operation of a flow type atomic layer deposition (ALD) reactor is developed...
Thesis (S.B.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 2010.This ele...
Abstract: Tremendous interest has been drawn towards the atomic layer deposition (ALD) as an ultrath...