Add to ORKGIn this work, the particular and combined influence of nonparabolicity and phonon scattering on the device characteristics of a triple-gate silicon nanowire is investigated. In addition, different approximations of the retarded self-energy for electron-phonon scattering are analyzed in terms of the electrostatics, current and computational cos
Continual technology innovations make it possible to fabricate electronic devices on the order of 10...
Fabrication techniques at the nanometer scale offer potential opportunities to access single dopant ...
Semiconductor nanowires may be the core components of next generation processors and memories. In ef...
An atomistic full-band quantum transport simulator has been developed to study three-dimensional Si ...
An atomistic full-band quantum transport simulator has been developed to study three-dimensional Si ...
This paper reviews our previous theoretical studies and gives further insight into phonon scattering...
This paper reviews our previous theoretical studies and gives further insight into phonon scattering...
In this thesis, we perform atomistic quantum transport simulations of realistic nanoelectronic struc...
This paper presents the effect of different elastic acoustic and inelastic optical electron-phonon i...
Electron transport is computed in 3nm Si nanowires subject to incoherent scattering from phonons. Th...
Electron transport is computed in 3nm Si nanowires subject to incoherent scattering from phonons. Th...
In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum tr...
In this work, the impact of the real part of the phonon self-energy on the transfer characteristics ...
Electron-phonon scattering is shown to increase dramatically at small nanowire cross-sections so tha...
Using three-dimensional quantum simulations we investigate the effluence of intravalley acoustic pho...
Continual technology innovations make it possible to fabricate electronic devices on the order of 10...
Fabrication techniques at the nanometer scale offer potential opportunities to access single dopant ...
Semiconductor nanowires may be the core components of next generation processors and memories. In ef...
An atomistic full-band quantum transport simulator has been developed to study three-dimensional Si ...
An atomistic full-band quantum transport simulator has been developed to study three-dimensional Si ...
This paper reviews our previous theoretical studies and gives further insight into phonon scattering...
This paper reviews our previous theoretical studies and gives further insight into phonon scattering...
In this thesis, we perform atomistic quantum transport simulations of realistic nanoelectronic struc...
This paper presents the effect of different elastic acoustic and inelastic optical electron-phonon i...
Electron transport is computed in 3nm Si nanowires subject to incoherent scattering from phonons. Th...
Electron transport is computed in 3nm Si nanowires subject to incoherent scattering from phonons. Th...
In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum tr...
In this work, the impact of the real part of the phonon self-energy on the transfer characteristics ...
Electron-phonon scattering is shown to increase dramatically at small nanowire cross-sections so tha...
Using three-dimensional quantum simulations we investigate the effluence of intravalley acoustic pho...
Continual technology innovations make it possible to fabricate electronic devices on the order of 10...
Fabrication techniques at the nanometer scale offer potential opportunities to access single dopant ...
Semiconductor nanowires may be the core components of next generation processors and memories. In ef...