Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being investigated as a means of overcoming the power density and energy inefficiency limitations of CMOS technology. In this paper, projected tunnel transistor technologies are evaluated and compared to LP and HP versions of both conventional and FinFET CMOS in terms of their power and energy in different application areas.Ministerio de Economía y Competitividad FEDER TEC2013-40670-
In this work, a complementary InAs/Al0.05Ga0.95Sb tunnel field-effect-Transistor (TFET) virtual tech...
Reducing supply voltage is an effective way to reduce power consumption, however, it greatly reduces...
Over the recent decades, the balance between increasing the complexity of computer chips and simulta...
In this paper, five projected tunnel FET (TFET) technologies are evaluated and compared with MOSFET ...
Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being ...
Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being i...
Tunnel transistors are steep subthreshold slope devices suitable for low voltage operation so being...
Tunnel field-effect transistors (TFETs) are one of the most attractive steep subthreshold slope devi...
Tunnel transistors are one of the most attractive steep sub threshold slope devices currently being ...
As the conventional metal oxide semiconductor field-effect transistor (MOSFET) keep scaling down to ...
This paper presents a comparative study between Tunnel-FETs (TFETs) and SOI MOSFETs for ultra-low po...
Tunnel transistors are one of the most attractive steep subthreshold slope devices which are being i...
In this paper, the potential of Tunnel FETs (TFETs) for ultra-low power operation is investigated in...
With voltage scaling to reduce power consumption in scaled transistors the subthreshold swing is bec...
Continuing scaling of transistors as density approaches the terascale regime (1012 devices/cm2) requ...
In this work, a complementary InAs/Al0.05Ga0.95Sb tunnel field-effect-Transistor (TFET) virtual tech...
Reducing supply voltage is an effective way to reduce power consumption, however, it greatly reduces...
Over the recent decades, the balance between increasing the complexity of computer chips and simulta...
In this paper, five projected tunnel FET (TFET) technologies are evaluated and compared with MOSFET ...
Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being ...
Tunnel transistors are one of the most attractive steep subthreshold slope devices currently being i...
Tunnel transistors are steep subthreshold slope devices suitable for low voltage operation so being...
Tunnel field-effect transistors (TFETs) are one of the most attractive steep subthreshold slope devi...
Tunnel transistors are one of the most attractive steep sub threshold slope devices currently being ...
As the conventional metal oxide semiconductor field-effect transistor (MOSFET) keep scaling down to ...
This paper presents a comparative study between Tunnel-FETs (TFETs) and SOI MOSFETs for ultra-low po...
Tunnel transistors are one of the most attractive steep subthreshold slope devices which are being i...
In this paper, the potential of Tunnel FETs (TFETs) for ultra-low power operation is investigated in...
With voltage scaling to reduce power consumption in scaled transistors the subthreshold swing is bec...
Continuing scaling of transistors as density approaches the terascale regime (1012 devices/cm2) requ...
In this work, a complementary InAs/Al0.05Ga0.95Sb tunnel field-effect-Transistor (TFET) virtual tech...
Reducing supply voltage is an effective way to reduce power consumption, however, it greatly reduces...
Over the recent decades, the balance between increasing the complexity of computer chips and simulta...